 | | |
| PartNumber | BSP61,115 | BSP60,115 |
| Description | Darlington Transistors TRANS DARLINGTON TAPE-7 | Darlington Transistors TRANS DARLINGTON |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Darlington Transistors | Darlington Transistors |
| RoHS | Y | Y |
| Configuration | Single | Single |
| Transistor Polarity | PNP | PNP |
| Collector Emitter Voltage VCEO Max | 60 V | 45 V |
| Emitter Base Voltage VEBO | 5 V | 5 V |
| Collector Base Voltage VCBO | 80 V | 60 V |
| Maximum DC Collector Current | 1 A | 1 A |
| Pd Power Dissipation | 1.25 W | 1.25 W |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-3 | SOT-223-3 |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel |
| DC Current Gain hFE Max | 1000 | 1000 |
| Height | 1.7 mm | 1.7 mm |
| Length | 6.7 mm | 6.7 mm |
| Operating Temperature Range | - 65 C to + 150 C | - 65 C to + 150 C |
| Width | 3.7 mm | 3.7 mm |
| Brand | Nexperia | Nexperia |
| Continuous Collector Current | - 1 A | - 1 A |
| DC Collector/Base Gain hfe Min | 1000 | 1000 |
| Product Type | Darlington Transistors | Darlington Transistors |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | Transistors | Transistors |
| Part # Aliases | BSP61 T/R | BSP60 T/R |
| Unit Weight | 0.003951 oz | 0.003951 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Nexperia |
BSP61,115 | Darlington Transistors TRANS DARLINGTON TAPE-7 | |
| BSP60,115 | Darlington Transistors TRANS DARLINGTON | ||
| BSP60,115 | Darlington Transistors TRANS DARLINGTON | ||
| BSP61,115 | Darlington Transistors TRANS DARLINGTON TAPE-7 | ||
Infineon Technologies |
BSP613P H6327 | MOSFET P-Ch -60V -2.9A SOT-223-3 | |
| BSP612PH6327XTSA1 | MOSFET | ||
| BSP603S2L | MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS | ||
| BSP603S2LHUMA1 | MOSFET N-CH 55V 5.2A SOT-223 | ||
| BSP60E6327HTSA1 | TRANS PNP DARL 45V 1A SOT-223 | ||
| BSP60H6327XTSA1 | TRANS PNP DARL 45V 1A SOT223 | ||
| BSP612PH6327XTSA1 | SMALL SIGNAL+P-CH | ||
| BSP613P | MOSFET P-CH 60V 2.9A SOT-223 | ||
Infineon Technologies |
BSP603S2LHUMA1 | MOSFET N-CHANNEL_55/60V | |
| BSP60H6327XTSA1 | Darlington Transistors AF TRANSISTORS | ||
| BSP60.115 | Transistor: PNP, bipolar, Darlington, 45V, 1A, 1.25W, SOT223 | ||
| BSP60 | TRANSISTOR, DARLINGTON, -45V, SOT223, Transistor Polarity:Dual PNP, Collector Emitter Voltage V(br)ceo:-45V, Transition Frequency ft:200MHz, Power Dissipation Pd:1.25W, DC Collector Current:-1A, | ||
| BSP60 E6433 | Nuevo y original | ||
| BSP60 E6327 | Nuevo y original | ||
| BSP60 E6327 SOT223 | Nuevo y original | ||
| BSP60 E6327 , TEM2027D , | Nuevo y original | ||
| BSP60 E6433 , TEM2300 , | Nuevo y original | ||
| BSP60 H6327 | Nuevo y original | ||
| BSP60115 | Now Nexperia BSP60 - Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SC-73 | ||
| BSP603 | Nuevo y original | ||
| BSP603S22 | Nuevo y original | ||
| BSP603S2L .. | Nuevo y original | ||
| BSP603S2L H6327 | Nuevo y original | ||
| BSP603S2LGRN | Nuevo y original | ||
| BSP603S2LNT | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP605 | Nuevo y original | ||
| BSP60E6327 | Small Signal Bipolar Transisto | ||
| BSP60E6359 | Nuevo y original | ||
| BSP60H6327 | Nuevo y original | ||
| BSP61 | Nuevo y original | ||
| BSP61 , TESD05CB , 44U | Nuevo y original | ||
| BSP61 E6327 | Nuevo y original | ||
| BSP61 H6327 | Nuevo y original | ||
| BSP61. | Nuevo y original | ||
| BSP61/BSP62/BSP60 | Nuevo y original | ||
| BSP61115 | Now Nexperia BSP61 - Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SC-73 | ||
| BSP612P | Nuevo y original | ||
| BSP612P H6327 | Nuevo y original | ||
| BSP613 | Nuevo y original | ||
| BSP613P E6327 | Nuevo y original | ||
| BSP613P H6327 | MOSFET P-Ch -60V -2.9A SOT-223-3 | ||
| BSP613P H6327XTSA | Nuevo y original | ||
| BSP613P L6327 | MOSFET P-Ch -60V 2.9A SOT-223-3 | ||
| BSP613PH6327 | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP613PE6327 | Nuevo y original | ||
| BSP603S2L | MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS |