 |  | | |
| PartNumber | BSP320S H6327 | BSP320S E6327 | BSP320S E6433 |
| Description | MOSFET N-Ch 60V 2.9A SOT-223-3 | MOSFET N-CH 60V 2.9A SOT-223 | MOSFET N-CH 60V 2.9A SOT-223 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 2.9 A | - | - |
| Rds On Drain Source Resistance | 120 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 9.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | BSP320 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 2.5 S | - | - |
| Fall Time | 35 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Part # Aliases | BSP320SH6327XTSA1 SP001058768 | - | - |
| Unit Weight | 0.003951 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP320SH6433XTMA1 | MOSFET SIPMOS Sm-Signal 60V 120mOhm 2.9A | |
| BSP320S H6327 | MOSFET N-Ch 60V 2.9A SOT-223-3 | ||
| BSP320SH6327XTSA1 | MOSFET N-Ch 60V 2.9A SOT-223-3 | ||
| BSP320SL6327HTSA1 | MOSFET N-CH 60V 2.9A SOT-223 | ||
| BSP320SL6433HTMA1 | MOSFET N-CH 60V 2.9A SOT-223 | ||
| BSP320SH6433XTMA1 | MOSFET N-CH 60V 2.9A SOT223 | ||
| BSP320S E6327 | MOSFET N-CH 60V 2.9A SOT-223 | ||
| BSP320S E6433 | MOSFET N-CH 60V 2.9A SOT-223 | ||
| BSP320SH6327XTSA1 | IGBT Transistors MOSFET N-Ch 60V 2.9A SOT-223-3 | ||
| BSP320S H6327 | MOSFET N-Ch 60V 2.9A SOT-223-3 | ||
| BSP320SH6327 | 60V,120m,2.9A,N-Ch Small-Signal MOSFET | ||
| BSP320S | Nuevo y original | ||
| BSP320S L6327 , TEA1892T | Nuevo y original | ||
| BSP320S(L6327) | Nuevo y original | ||
| BSP320S,L6327 | Nuevo y original | ||
| BSP320S-E6433 | Nuevo y original | ||
| BSP320SE6327 | Nuevo y original | ||
| BSP320SL6327 | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP320SL6327HTSA1375 | Nuevo y original | ||
| BSP320SL6433 | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP320S L6327 | IGBT Transistors MOSFET N-Ch 60V 2.9A SOT-223-3 | ||
| BSP320S L6433 | IGBT Transistors MOSFET N-Ch 60V 2.9A SOT-223-3 |