PartNumber | BSP320S H6327 | BSP320S E6327 | BSP320S E6433 |
Description | MOSFET N-Ch 60V 2.9A SOT-223-3 | MOSFET N-CH 60V 2.9A SOT-223 | MOSFET N-CH 60V 2.9A SOT-223 |
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-223-4 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 2.9 A | - | - |
Rds On Drain Source Resistance | 120 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 9.7 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.8 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 1.6 mm | - | - |
Length | 6.5 mm | - | - |
Series | BSP320 | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 3.5 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 2.5 S | - | - |
Fall Time | 35 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 25 ns | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 25 ns | - | - |
Typical Turn On Delay Time | 11 ns | - | - |
Part # Aliases | BSP320SH6327XTSA1 SP001058768 | - | - |
Unit Weight | 0.003951 oz | - | - |
Fabricante | Parte # | Descripción | RFQ |
---|---|---|---|
Infineon Technologies |
BSP322PH6327XTSA1 | MOSFET P-Ch -100V 1A SOT-223-3 | |
BSP320SH6433XTMA1 | MOSFET SIPMOS Sm-Signal 60V 120mOhm 2.9A | ||
BSP320S H6327 | MOSFET N-Ch 60V 2.9A SOT-223-3 | ||
BSP321PH6327XTSA1 | MOSFET SIPMOS Sm-Signal 900mOhm -100V 980mA | ||
BSP324H6327XTSA1 | MOSFET N-Ch 400V 170mA SOT-223-3 | ||
BSP320SH6327XTSA1 | MOSFET N-Ch 60V 2.9A SOT-223-3 | ||
BSP320SL6327HTSA1 | MOSFET N-CH 60V 2.9A SOT-223 | ||
BSP320SL6433HTMA1 | MOSFET N-CH 60V 2.9A SOT-223 | ||
BSP321PH6327XTSA1 | MOSFET P-CH 100V 980MA SOT223 | ||
BSP321PL6327HTSA1 | MOSFET P-CH 100V 0.98A SOT-223 | ||
BSP322PH6327XTSA1 | MOSFET P-CH 100V 1A SOT-223 | ||
BSP322PL6327HTSA1 | MOSFET P-CH 100V 1A SOT-223 | ||
BSP320SH6433XTMA1 | MOSFET N-CH 60V 2.9A SOT223 | ||
BSP324 E6327 | MOSFET N-CH 400V 170MA SOT-223 | ||
BSP324H6327XTSA1 | MOSFET N-CH 400V 170MA SOT-223 | ||
BSP320S E6327 | MOSFET N-CH 60V 2.9A SOT-223 | ||
BSP320S E6433 | MOSFET N-CH 60V 2.9A SOT-223 | ||
BSP320SH6327XTSA1 | IGBT Transistors MOSFET N-Ch 60V 2.9A SOT-223-3 | ||
BSP320S H6327 | MOSFET N-Ch 60V 2.9A SOT-223-3 | ||
BSP320SH6327 | 60V,120m,2.9A,N-Ch Small-Signal MOSFET | ||
BSP32 | Transistor: N-MOSFET, unipolar, 60V, 2.9A, 1.8W, SOT223 | ||
BSP320 | Nuevo y original | ||
BSP320 , TEA1892ATS/1X , | Nuevo y original | ||
BSP320S | Nuevo y original | ||
BSP320S L6327 , TEA1892T | Nuevo y original | ||
BSP320S(L6327) | Nuevo y original | ||
BSP320S,L6327 | Nuevo y original | ||
BSP320S-E6433 | Nuevo y original | ||
BSP320SE6327 | Nuevo y original | ||
BSP320SL6327 | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
BSP320SL6327HTSA1375 | Nuevo y original | ||
BSP320SL6433 | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
BSP32115 | Now Nexperia BSP32 - Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin | ||
BSP321P | Nuevo y original | ||
BSP321P H6327 | Nuevo y original | ||
BSP321P L6327 | MOSFET P-Ch -100V 980mA SOT-223-3 | ||
BSP321PH6327 | Nuevo y original | ||
BSP321PH6327XTSA1782 | - Bulk (Alt: BSP321PH6327XTSA1782) | ||
BSP321PL6327 | - Bulk (Alt: BSP321PL6327) | ||
BSP322P | Nuevo y original | ||
BSP322P H6327 | MOSFETs | ||
BSP322P L6327 | MOSFET P-Ch -100V 1A SOT-223-3 | ||
BSP322PH6327 | Nuevo y original | ||
BSP322PL6327 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
BSP324 | MOSFET, N, SOT-223 | ||
BSP324 H6327 | N-CH MOS-FET 0,17A 400V SOT223 | ||
BSP324 L6327 | MOSFET N-Ch 400V 170mA SOT-223-3 | ||
BSP320S L6327 | IGBT Transistors MOSFET N-Ch 60V 2.9A SOT-223-3 | ||
BSP320S L6433 | IGBT Transistors MOSFET N-Ch 60V 2.9A SOT-223-3 | ||
Nexperia |
BSP32,115 | Bipolar Transistors - BJT TRANS MED PWR TAPE-7 |