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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| BSP322PL6327HTSA1 DISTI # BSP322PL6327HTSA1TR-ND | Infineon Technologies AG | MOSFET P-CH 100V 1A SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP322PL6327HTSA1 DISTI # BSP322PL6327HTSA1 | Infineon Technologies AG | - Bulk (Alt: BSP322PL6327HTSA1) RoHS: Compliant Min Qty: 1786 Container: Bulk | Americas - 0 |
|
| BSP322P L6327 DISTI # 726-BSP322PL6327 | Infineon Technologies AG | MOSFET P-Ch -100V 1A SOT-223-3 RoHS: Compliant | 0 | |
| BSP322PL6327 | Infineon Technologies AG | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5380 |
|
| BSP322PL6327HTSA1 | Infineon Technologies AG | Small Signal Field-Effect Transistor RoHS: Not Compliant | 29000 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: BSP322PH6327XTSA1 OMO.#: OMO-BSP322PH6327XTSA1 |
MOSFET P-Ch -100V 1A SOT-223-3 |
|
Mfr.#: BSP322P OMO.#: OMO-BSP322P-1190 |
Nuevo y original |
|
|
Mfr.#: BSP322P H6327 OMO.#: OMO-BSP322P-H6327-1190 |
MOSFETs |
|
|
Mfr.#: BSP322P L6327 OMO.#: OMO-BSP322P-L6327-1190 |
MOSFET P-Ch -100V 1A SOT-223-3 |
|
|
Mfr.#: BSP322PH6327 OMO.#: OMO-BSP322PH6327-1190 |
Nuevo y original |
|
Mfr.#: BSP322PH6327XTSA1 |
MOSFET P-CH 100V 1A SOT-223 |
|
|
Mfr.#: BSP322PL6327 OMO.#: OMO-BSP322PL6327-1190 |
Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP322PL6327HTSA1 |
MOSFET P-CH 100V 1A SOT-223 |