PartNumber | BSP316P H6327 | BSP316PE6327 | BSP316PE6327T |
Description | MOSFET P-Ch -100V -680mA SOT-223-3 | MOSFET P-CH 100V 0.68A SOT223 | MOSFET P-CH 100V 0.68A SOT223 |
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-223-4 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 680 mA | - | - |
Rds On Drain Source Resistance | 1.4 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | - 6.4 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.8 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 1.6 mm | - | - |
Length | 6.5 mm | - | - |
Series | BSP316 | - | - |
Transistor Type | 1 P-Channel | - | - |
Width | 3.5 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 500 mS | - | - |
Fall Time | 25.9 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 7.5 ns | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 67.4 ns | - | - |
Typical Turn On Delay Time | 4.7 ns | - | - |
Part # Aliases | BSP316PH6327XTSA1 SP001058754 | - | - |
Unit Weight | 0.003951 oz | - | - |