BSP316P

BSP316P H6327 vs BSP316PE6327 vs BSP316PE6327T

 
PartNumberBSP316P H6327BSP316PE6327BSP316PE6327T
DescriptionMOSFET P-Ch -100V -680mA SOT-223-3MOSFET P-CH 100V 0.68A SOT223MOSFET P-CH 100V 0.68A SOT223
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current680 mA--
Rds On Drain Source Resistance1.4 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge- 6.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.6 mm--
Length6.5 mm--
SeriesBSP316--
Transistor Type1 P-Channel--
Width3.5 mm--
BrandInfineon Technologies--
Forward Transconductance Min500 mS--
Fall Time25.9 ns--
Product TypeMOSFET--
Rise Time7.5 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time67.4 ns--
Typical Turn On Delay Time4.7 ns--
Part # AliasesBSP316PH6327XTSA1 SP001058754--
Unit Weight0.003951 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BSP316PH6327XTSA1 MOSFET P-Ch -100V -680mA SOT-223-3
BSP316P H6327 MOSFET P-Ch -100V -680mA SOT-223-3
BSP316PH6327XTSA1 MOSFET P-CH 100V 0.68A SOT223
BSP316PL6327HTSA1 MOSFET P-CH 100V 0.68A SOT-223
BSP316PE6327 MOSFET P-CH 100V 0.68A SOT223
BSP316PE6327T MOSFET P-CH 100V 0.68A SOT223
BSP316P Nuevo y original
BSP316P E6327 Nuevo y original
BSP316P H6327 MOSFET P-Ch -100V -680mA SOT-223-3
BSP316P L6327 MOSFET P-Ch -100V 680mA SOT-223-3
BSP316P/BSP316 Nuevo y original
BSP316PE6327XTINCT Nuevo y original
BSP316PH6327 -100V,-0.68A,P-Ch Small-Signal MOSFET
BSP316PL6327 Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
BSP316PL6327XT Nuevo y original
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