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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| BSP316PE6327 DISTI # BSP316PE6327INTR-ND | Infineon Technologies AG | MOSFET P-CH 100V 0.68A SOT223 RoHS: Not compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP316PE6327 DISTI # BSP316PE6327INCT-ND | Infineon Technologies AG | MOSFET P-CH 100V 0.68A SOT223 RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP316PE6327T DISTI # BSP316PE6327XTINTR-ND | Infineon Technologies AG | MOSFET P-CH 100V 0.68A SOT223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP316PE6327T DISTI # BSP316PE6327XTINCT-ND | Infineon Technologies AG | MOSFET P-CH 100V 0.68A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call |
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: BSP316P H6327 OMO.#: OMO-BSP316P-H6327 |
MOSFET P-Ch -100V -680mA SOT-223-3 |
|
Mfr.#: BSP316 OMO.#: OMO-BSP316-1190 |
Nuevo y original |
|
|
Mfr.#: BSP316 L6327 OMO.#: OMO-BSP316-L6327-1190 |
Nuevo y original |
|
|
Mfr.#: BSP316E6327 OMO.#: OMO-BSP316E6327-1190 |
Power Field-Effect Transistor, 0.65A I(D), 100V, 2.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSP316P E6327 OMO.#: OMO-BSP316P-E6327-1190 |
Nuevo y original |
|
|
Mfr.#: BSP316P H6327 OMO.#: OMO-BSP316P-H6327-1190 |
MOSFET P-Ch -100V -680mA SOT-223-3 |
|
|
Mfr.#: BSP316P L6327 OMO.#: OMO-BSP316P-L6327-1190 |
MOSFET P-Ch -100V 680mA SOT-223-3 |
|
|
Mfr.#: BSP316PE6327XTINCT OMO.#: OMO-BSP316PE6327XTINCT-1190 |
Nuevo y original |
|
|
Mfr.#: BSP316PH6327 OMO.#: OMO-BSP316PH6327-1190 |
-100V,-0.68A,P-Ch Small-Signal MOSFET |
|
|
Mfr.#: BSP316S OMO.#: OMO-BSP316S-1190 |
Nuevo y original |
