 |  | |
| PartNumber | BSO211PHXUMA1 | BSO211PH |
| Description | MOSFET SMALL SIGNAL N-CH | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SO-8 | - |
| Number of Channels | 2 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - |
| Id Continuous Drain Current | 4.6 A | - |
| Rds On Drain Source Resistance | 54 mOhms, 54 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - |
| Vgs Gate Source Voltage | 12 V | - |
| Qg Gate Charge | - 10 nC, - 10 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 2 W | - |
| Configuration | Dual | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | - |
| Height | 1.75 mm | - |
| Length | 4.9 mm | - |
| Series | BSO211 | - |
| Transistor Type | 2 P-Channel | - |
| Width | 3.9 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 8 S, 8 S | - |
| Fall Time | 27 ns, 27 ns | - |
| Moisture Sensitive | Yes | - |
| Product Type | MOSFET | - |
| Rise Time | 13 ns, 13 ns | - |
| Factory Pack Quantity | 2500 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 23 ns, 23 ns | - |
| Typical Turn On Delay Time | 9 ns, 9 ns | - |
| Part # Aliases | BSO211P H SP000613844 | - |
| Unit Weight | 0.019048 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSO211PHXUMA1 | MOSFET SMALL SIGNAL N-CH | |
| BSO211PHXUMA1 | MOSFET 2P-CH 20V 4A 8DSO | ||
| BSO211PH | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |