BSO21

BSO211P H vs BSO211PHXUMA1 vs BSO211PNTMA1

 
PartNumberBSO211P HBSO211PHXUMA1BSO211PNTMA1
DescriptionMOSFET SMALL SIGNAL N-CHMOSFET SMALL SIGNAL N-CHMOSFET 2P-CH 20V 4.7A 8SOIC
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current4.6 A4.6 A-
Rds On Drain Source Resistance54 mOhms, 54 mOhms54 mOhms, 54 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage12 V12 V-
Qg Gate Charge- 10 nC, - 10 nC- 10 nC, - 10 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2 W2 W-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
SeriesBSO211BSO211-
Transistor Type2 P-Channel2 P-Channel-
Width3.9 mm3.9 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min8 S, 8 S8 S, 8 S-
Fall Time27 ns, 27 ns27 ns, 27 ns-
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFET-
Rise Time13 ns, 13 ns13 ns, 13 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time23 ns, 23 ns23 ns, 23 ns-
Typical Turn On Delay Time9 ns, 9 ns9 ns, 9 ns-
Part # AliasesBSO211PHXUMA1 SP000613844BSO211P H SP000613844-
Unit Weight-0.019048 oz-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BSO211P H MOSFET SMALL SIGNAL N-CH
BSO211PHXUMA1 MOSFET SMALL SIGNAL N-CH
BSO211PHXUMA1 MOSFET 2P-CH 20V 4A 8DSO
BSO211PNTMA1 MOSFET 2P-CH 20V 4.7A 8SOIC
BSO215C MOSFET N/P-CH 20V 3.7A 8SOIC
BSO211P Trans MOSFET P-CH 20V 4.7A 8-Pin DSO - Bulk (Alt: BSO211P)
BSO211P H MOSFET SMALL SIGNAL N-CH
BSO211P/211P/LOC211P Nuevo y original
BSO211PH Power Field-Effect Transistor, 3.2A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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