BSM75GD120DN

BSM75GD120DN2 vs BSM75GD120DN2E vs BSM75GD120DN2BOSA1

 
PartNumberBSM75GD120DN2BSM75GD120DN2EBSM75GD120DN2BOSA1
DescriptionIGBT Modules 1200V 75A 3-PHASEIGBT 2 LOW POWER ECONO3-1
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationHex--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.5 V--
Continuous Collector Current at 25 C103 A--
Gate Emitter Leakage Current320 nA--
Pd Power Dissipation520 W--
Package / CaseEconoPACK 3A--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height17 mm--
Length122 mm--
Width62 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM75GD120DN2BOSA1 SP000100364--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BSM75GD120DN2 IGBT Modules 1200V 75A 3-PHASE
BSM75GD120DN2BOSA1 IGBT 2 LOW POWER ECONO3-1
BSM75GD120DN2E Nuevo y original
BSM75GD120DN2 IGBT Modules 1200V 75A 3-PHASE
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