 |  |  | |
| PartNumber | BSM25GD120DN2E3224 | BSM25GD120DN2 | BSM25GD120DN2BOSA1 |
| Description | IGBT Modules N-CH 1.2KV 35A | IGBT Modules 1200V 25A FL BRIDGE | 35 A, 1200 V, N-CHANNEL IGBT |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | Y | Y | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Hex | Hex | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
| Collector Emitter Saturation Voltage | 2.5 V | 2.5 V | - |
| Continuous Collector Current at 25 C | 35 A | 35 A | - |
| Gate Emitter Leakage Current | 180 nA | 180 nA | - |
| Pd Power Dissipation | 200 W | 200 W | - |
| Package / Case | EconoPACK 2 | EconoPACK 2A | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tray | Tray | - |
| Height | 17 mm | 17 mm | - |
| Length | 107.5 mm | 107.5 mm | - |
| Width | 45 mm | 45 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | BSM25GD120DN2E3224BOSA1 SP000100361 | BSM25GD120DN2BOSA1 SP000100370 | - |
| Unit Weight | - | 6.349313 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSM25GD120DN2E3224 | IGBT Modules N-CH 1.2KV 35A | |
| BSM25GD120DN2 | IGBT Modules 1200V 25A FL BRIDGE | ||
| BSM25GD120DN2BOSA1 | 35 A, 1200 V, N-CHANNEL IGBT | ||
| BSM25GD120DN2E3224BOSA1 | IGBT 2 LOW POWER ECONO2-2 | ||
| BSM25GD120DN2E | Nuevo y original | ||
| BSM25GD120DN2E224 | Nuevo y original | ||
| BSM25GD120DN2_E3224 | Nuevo y original | ||
| BSM25GD120DN2E3224 | IGBT Modules N-CH 1.2KV 35A | ||
| BSM25GD120DN2 | IGBT Modules 1200V 25A FL BRIDGE |