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BSM25GD120DN2

BSM25GD120DN2
Mfr. #:
BSM25GD120DN2
Fabricante:
Infineon Technologies
Descripción:
IGBT Modules 1200V 25A FL BRIDGE
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSM25GD120DN2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Módulos IGBT
RoHS:
Y
Producto:
Módulos de silicio IGBT
Configuración:
Hex
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
2.5 V
Corriente continua del colector a 25 C:
35 A
Corriente de fuga puerta-emisor:
180 nA
Pd - Disipación de energía:
200 W
Paquete / Caja:
EconoPACK 2A
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Bandeja
Altura:
17 mm
Longitud:
107.5 mm
Ancho:
45 mm
Marca:
Infineon Technologies
Estilo de montaje:
Montaje en chasis
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
10
Subcategoría:
IGBT
Parte # Alias:
BSM25GD120DN2BOSA1 SP000100370
Unidad de peso:
6.349313 oz
Tags
BSM25GD120DN2, BSM25GD120DN, BSM25GD120D, BSM25GD12, BSM25GD, BSM25G, BSM25, BSM2, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
IGBT - Standard Modules 1200V,25A,FL BRIDGE
***omponent
TRANS IGBT MODULE N-CH 1200V 35A 17ECONOPACK 2
***nell
IGBT MODULE, 1200V, ECONOPACK3; Transistor type:3-Phase Bridge; Voltage, Vces:1200V; Current, Ic continuous a max:25A; Voltage, Vce sat max:3V; Power dissipation:200W; Case style:Econopack 2; Current, Icm pulsed:50A; Power, Pd:200W; Temperature, current:80°C; Temperature, full power rating:25°C; Termination Type:Solder; Transistors, No. of:6; Voltage, Vce sat typ:2.5V; Voltage, Vceo:1200V
Parte # Mfg. Descripción Valores Precio
BSM25GD120DN2BOSA1
DISTI # BSM25GD120DN2BOSA1-ND		Infineon Technologies AGIGBT 2 LOW POWER ECONO2-2
RoHS: Compliant
Min Qty: 10
Container: Tray		Limited Supply - Call
  • 10:$91.5730
BSM25GD120DN2E3224BOSA1
DISTI # BSM25GD120DN2E3224BOSA1-ND		Infineon Technologies AGIGBT 2 LOW POWER ECONO2-2
RoHS: Compliant
Min Qty: 10
Container: Tray		Limited Supply - Call
  • 10:$91.5730
BSM25GD120DN2BOSA1
DISTI # BSM25GD120DN2BOSA1		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm - Trays (Alt: BSM25GD120DN2BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray		Americas - 0
  • 10:$85.3900
  • 20:$82.3900
  • 40:$79.3900
  • 60:$76.6900
  • 100:$75.2900
BSM25GD120DN2E3224
DISTI # SP000100361		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm T/R (Alt: SP000100361)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1:€81.2900
  • 10:€78.8900
  • 25:€77.9900
  • 50:€74.0900
  • 100:€72.7900
  • 500:€71.9900
  • 1000:€70.9900
BSM25GD120DN2E3224BOSA1
DISTI # BSM25GD120DN2E3224BOSA1		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 25A nom 200W 17-Pin EconoPACK 2A 107.5x45mm T/R - Trays (Alt: BSM25GD120DN2E3224BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray		Americas - 0
  • 10:$85.3900
  • 20:$82.3900
  • 40:$79.3900
  • 60:$76.6900
  • 100:$75.2900
BSM25GD120DN2
DISTI # 95M4164		Infineon Technologies AGIGBT MOD, N-CH, 1.2KV, 35A, ECONOPACK 2,Transistor Polarity:N Channel,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:200W,Collector Emitter Voltage V(br)ceo:1.2kV,Product Range:-RoHS Compliant: Yes0
  • 1:$94.9300
  • 5:$93.1900
  • 10:$88.9900
BSM25GD120DN2
DISTI # 641-BSM25GD120DN2		Infineon Technologies AGIGBT Modules 1200V 25A FL BRIDGE
RoHS: Compliant		0
    BSM25GD120DN2E3224
    DISTI # 641-BSM25GD120DN2E32    		Infineon Technologies AGIGBT Modules N-CH 1.2KV 35A
    RoHS: Compliant    		0
    • 1:$94.9300
    • 5:$93.1900
    • 10:$88.9900
    • 25:$86.0300
    BSM25GD120DN2E3224
    DISTI # IGBT1939    		Infineon Technologies AGSixpack1200V 35A Econo 2
    RoHS: Compliant    		Stock DE - 0Stock US - 0
    • 10:$100.9500
    • 20:$86.2100
    BSM25GD120DN2
    DISTI # 1496948    		Infineon Technologies AGIGBT MODULE, 1200V, ECONOPACK3
    RoHS: Compliant    		0
    • 1:£73.2500
    • 5:£71.9100
    • 10:£70.6300
    BSM25GD120DN2
    DISTI # 1496948    		Infineon Technologies AGIGBT MODULE, 1200V, ECONOPACK3
    RoHS: Compliant    		0
    • 1:$150.2200
    • 5:$147.4700
    • 10:$146.4300
    Imagen Parte # Descripción
    BSM25GD120DN2

    Mfr.#: BSM25GD120DN2

    OMO.#: OMO-BSM25GD120DN2

    		 IGBT Modules 1200V 25A FL BRIDGE
    BSM25GAL120D

    Mfr.#: BSM25GAL120D

    OMO.#: OMO-BSM25GAL120D-1190

    		 Nuevo y original
    BSM25GAL120DN2

    Mfr.#: BSM25GAL120DN2

    OMO.#: OMO-BSM25GAL120DN2-1190

    		 Nuevo y original
    BSM25GB100D

    Mfr.#: BSM25GB100D

    OMO.#: OMO-BSM25GB100D-1190

    		 Insulated Gate Bipolar Transistor, 25A I(C), 1000V V(BR)CES, N-Channel
    BSM25GD100D

    Mfr.#: BSM25GD100D

    OMO.#: OMO-BSM25GD100D-1190

    		 Nuevo y original
    BSM25GD120DN1

    Mfr.#: BSM25GD120DN1

    OMO.#: OMO-BSM25GD120DN1-1190

    		 Nuevo y original
    BSM25GD120DN2E224

    Mfr.#: BSM25GD120DN2E224

    OMO.#: OMO-BSM25GD120DN2E224-1190

    		 Nuevo y original
    BSM25GP120B2

    Mfr.#: BSM25GP120B2

    OMO.#: OMO-BSM25GP120B2-1190

    		 Nuevo y original
    BSM25GD120DN2BOSA1

    Mfr.#: BSM25GD120DN2BOSA1

    OMO.#: OMO-BSM25GD120DN2BOSA1-INFINEON-TECHNOLOGIES

    		 35 A, 1200 V, N-CHANNEL IGBT
    BSM25GD120DN2

    Mfr.#: BSM25GD120DN2

    OMO.#: OMO-BSM25GD120DN2-125

    		 IGBT Modules 1200V 25A FL BRIDGE
    Disponibilidad
    Valores:
    Available
    En orden:
    1000
    Ingrese la cantidad:
    El precio actual de BSM25GD120DN2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    94,92 US$
    94,92 US$
    5
    93,18 US$
    465,90 US$
    10
    88,98 US$
    889,80 US$
    25
    86,02 US$
    2 150,50 US$
    100
    80,09 US$
    8 009,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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