 | |  | |
| PartNumber | BSC084P03NS3 G | BSC084P03NS3E G | BSC084P03NS3EGATMA1 |
| Description | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | MOSFET P-CH 30V 14.9A TDSON-8 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 78.6 A | 78.6 A | - |
| Rds On Drain Source Resistance | 6.1 mOhms | 8.4 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.1 V | - | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Qg Gate Charge | 58 nC | 43.4 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 69 W | 69 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS P3 | OptiMOS P3 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 33 S | - | - |
| Fall Time | 8 ns | 8.1 nS | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 134 ns | 133.5 nS | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 33 ns | 33.3 nS | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Part # Aliases | BSC084P03NS3GATMA1 BSC84P3NS3GXT SP000473020 | BSC084P03NS3EGATMA1 BSC84P3NS3EGXT SP000473012 | - |
| Unit Weight | 0.003527 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC084P03NS3 G | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | |
| BSC084P03NS3E G | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | ||
| BSC084P03NS3GATMA1 | MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | ||
| BSC084P03NS3 G | Trans MOSFET P-CH 30V 14.5A 8-Pin TDSON (Alt: BSC084P03NS3 G) | ||
| BSC084P03NS3GATMA1 | MOSFET P-CH 30V 14.9A TDSON-8 | ||
| BSC084P03NS3EGATMA1 | MOSFET P-CH 30V 14.9A TDSON-8 | ||
| BSC084P03NS3E G | RF Bipolar Transistors MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 | ||
| BSC084P03NS3EGATMA | Transistor: P-MOSFET, unipolar, -30V, -78.6A, 69W, PG-TDSON-8 | ||
| BSC084P03NS3EG | Nuevo y original | ||
| BSC084P03NS3GATMA1 , TDM | Nuevo y original | ||
| BSC084P03NS3G | MOSFET, P-CH, -30V, -78.6A, TDSON |