BSC039N06

BSC039N06NS vs BSC039N06NSATMA1 vs BSC039N06NS3G

 
PartNumberBSC039N06NSBSC039N06NSATMA1BSC039N06NS3G
DescriptionMOSFET N-Ch 60V 100A TDSON-8MOSFET N-Ch 60V 100A TDSON-8
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8PG-TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance3.9 mOhms3.9 mOhms-
Vgs th Gate Source Threshold Voltage2.1 V2.1 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge27 nC27 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation69 W69 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 5OptiMOS 5-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min42 S42 S-
Fall Time7 ns7 ns-
Product TypeMOSFETMOSFET-
Rise Time12 ns12 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time20 ns20 ns-
Typical Turn On Delay Time12 ns12 ns-
Part # AliasesBSC039N06NSATMA1 BSC39N6NSXT SP000985386BSC039N06NS BSC39N6NSXT SP000985386-
Unit Weight0.004171 oz0.004169 oz-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
BSC039N06NS MOSFET N-Ch 60V 100A TDSON-8
BSC039N06NSATMA1 MOSFET N-Ch 60V 100A TDSON-8
BSC039N06NSATMA1 MOSFET N-CH 60V 19A TDSON-8
BSC039N06NS Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP
BSC039N06NS3G Nuevo y original
BSC039N06NSS Nuevo y original
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