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BSC039N06NSATMA1

BSC039N06NSATMA1
Mfr. #:
BSC039N06NSATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 60V 100A TDSON-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC039N06NSATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
BSC039N06NSATMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PG-TDSON-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
100 A
Rds On - Resistencia de la fuente de drenaje:
3.9 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.1 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
27 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
69 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
OptiMOS
Embalaje:
Carrete
Altura:
1.27 mm
Longitud:
5.9 mm
Serie:
OptiMOS 5
Tipo de transistor:
1 N-Channel
Ancho:
5.15 mm
Marca:
Infineon Technologies
Transconductancia directa - Mín .:
42 S
Otoño:
7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
12 ns
Cantidad de paquete de fábrica:
5000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
20 ns
Tiempo típico de retardo de encendido:
12 ns
Parte # Alias:
BSC039N06NS BSC39N6NSXT SP000985386
Unidad de peso:
0.004169 oz
Tags
BSC039N06, BSC039, BSC03, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 10, N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC039N06NSATMA1
***ure Electronics
Single N-Channel 60 V 3.9 mOhm 27 nC OptiMOS™ Power Mosfet - TDSON-8
***p One Stop Japan
Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
***et Europe
Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R
***ical
Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP
***an P&S
60V,6.9mΩ,100A,N-Channel Power MOSFET
***ark
MOSFET, N-CH, 60V, 100A, TDSON-8
***i-Key
MOSFET N-CH 60V 19A TDSON-8
***ronik
N-CH 60V 100A 3.9mOhm SON-8
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:69W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CANALE N 60V 100A TDSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0033ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:69W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
Parte # Mfg. Descripción Valores Precio
BSC039N06NSATMA1
DISTI # V72:2272_06383845		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
RoHS: Compliant		416
  • 500:$0.7943
  • 250:$1.0183
  • 100:$1.0295
  • 25:$1.2359
  • 10:$1.2504
  • 1:$1.4301
BSC039N06NSATMA1
DISTI # BSC039N06NSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 19A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		39792In Stock
  • 1000:$0.9879
  • 500:$1.1922
  • 100:$1.5329
  • 10:$1.9080
  • 1:$2.1100
BSC039N06NSATMA1
DISTI # BSC039N06NSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 19A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		39792In Stock
  • 1000:$0.9879
  • 500:$1.1922
  • 100:$1.5329
  • 10:$1.9080
  • 1:$2.1100
BSC039N06NSATMA1
DISTI # BSC039N06NSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 19A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		35000In Stock
  • 5000:$0.8599
BSC039N06NSATMA1
DISTI # 30180726		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
RoHS: Compliant		416
  • 500:$0.9050
  • 250:$1.0169
  • 100:$1.0283
  • 25:$1.2344
  • 10:$1.2493
BSC039N06NSATMA1
DISTI # BSC039N06NSATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC039N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.8419
  • 10000:$0.8399
  • 20000:$0.8379
  • 30000:$0.8359
  • 50000:$0.8339
BSC039N06NSATMA1
DISTI # 50Y1802		Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 60 V, 0.0033 ohm, 10 V, 2.8 V RoHS Compliant: Yes100
  • 1:$1.7700
  • 10:$1.5000
  • 25:$1.4000
  • 50:$1.3000
  • 100:$1.2000
  • 250:$1.1300
  • 500:$1.0500
  • 1000:$0.8720
BSC039N06NS
DISTI # 726-BSC039N06NS		Infineon Technologies AGMOSFET N-Ch 60V 100A TDSON-8
RoHS: Compliant		2110
  • 1:$1.7700
  • 10:$1.5100
  • 100:$1.2100
  • 500:$1.0600
  • 1000:$0.8720
  • 2500:$0.8120
  • 5000:$0.7820
BSC039N06NSATMA1
DISTI # 726-BSC039N06NSATMA1		Infineon Technologies AGMOSFET N-Ch 60V 100A TDSON-8
RoHS: Compliant		167
  • 1:$1.7700
  • 10:$1.5000
  • 100:$1.2000
  • 500:$1.0500
  • 1000:$0.8720
  • 2500:$0.8120
  • 5000:$0.7820
BSC039N06NSATMA1Infineon Technologies AGSingle N-Channel 60 V 3.9 mOhm 27 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Not Compliant		5000Reel
  • 5000:$0.7400
BSC039N06NSATMA1
DISTI # 9064292P		Infineon Technologies AGMOSFET N-CHANNEL 60V 100A OPTIMOS TDSON8, RL10
  • 50:£0.8600
  • 250:£0.7500
  • 500:£0.6370
  • 1250:£0.5270
BSC039N06NSATMA1
DISTI # 9064292		Infineon Technologies AGMOSFET N-CHANNEL 60V 100A OPTIMOS TDSON8, PK210
  • 10:£1.0400
  • 50:£0.8600
  • 250:£0.7500
  • 500:£0.6370
  • 1250:£0.5270
BSC039N06NSATMA1
DISTI # 2480737RL		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:$2.8100
  • 10:$2.4000
  • 100:$1.9200
  • 500:$1.6800
  • 1000:$1.3800
  • 2500:$1.2900
  • 5000:$1.2400
BSC039N06NSATMA1
DISTI # 2480737		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:$2.8100
  • 10:$2.4000
  • 100:$1.9200
  • 500:$1.6800
  • 1000:$1.3800
  • 2500:$1.2900
  • 5000:$1.2400
BSC039N06NSATMA1
DISTI # 2480737		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TDSON-8
RoHS: Compliant		0
  • 5:£1.0500
  • 25:£0.8690
  • 100:£0.8120
  • 250:£0.7580
  • 500:£0.6430
BSC039N06NSATMA1
DISTI # C1S322000464359		Infineon Technologies AGMOSFETs
RoHS: Compliant		4120
  • 5000:$0.6720
BSC039N06NSATMA1
DISTI # C1S322000654314		Infineon Technologies AGMOSFETs
RoHS: Compliant		916
  • 250:$1.0519
  • 100:$1.0549
  • 25:$1.2553
  • 10:$1.2602
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Disponibilidad
Valores:
Available
En orden:
1988
Ingrese la cantidad:
El precio actual de BSC039N06NSATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,77 US$
1,77 US$
10
1,50 US$
15,00 US$
100
1,20 US$
120,00 US$
500
1,05 US$
525,00 US$
1000
0,87 US$
872,00 US$
2500
0,81 US$
2 030,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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