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BLS6G3135

BLS6G3135-120 vs BLS6G3135-120112 vs BLS6G3135-20

 
PartNumberBLS6G3135-120BLS6G3135-120112BLS6G3135-20
DescriptionRF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, S BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
Fabricante Parte # Descripción RFQ
BLS6G3135-120 RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, S BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
BLS6G3135-120112 Nuevo y original
BLS6G3135-20 Nuevo y original
BLS6G3135-20112 Now Ampleon, BLS6G3135-20, LDMOS S-band radar power transistor, SOT608 (CDFM2)
BLS6G3135S-120 Nuevo y original
BLS6G3135S-120112 BLS6G3135S-120/SOT502/TRAY
BLS6G3135S-20 Nuevo y original
BLS6G3135S-20112 Now Ampleon, BLS6G3135S-20, LDMOS S-band radar power transistor, SOT608 (CDFM2)
BLS6G3135-120,112 RF MOSFET Transistors LDMOS TNS
BLS6G3135S-120,112 RF MOSFET Transistors TRANS S-BAND RADAR LDMSO
BLS6G3135S-20,112 RF MOSFET Transistors TRANS S-BAND RADAR LDMOS
BLS6G3135-20,112 RF MOSFET Transistors LDMOS TNS
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