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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| BLS6G3135-120,112 DISTI # BLS6G3135-120,112-ND | Ampleon | RF FET LDMOS 60V 11DB SOT502A RoHS: Compliant Min Qty: 60 Container: Tray | Temporarily Out of Stock |
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| BLS6G3135-120,112 DISTI # 70R2902 | Ampleon | N CHANNEL S-BAND LDMOS TRANSISTOR, 32V, 3100MHZ - 3500MHZ, 2-SOT-502B,Drain Source Voltage Vds:32V,Continuous Drain Current Id:7.2A,Power Dissipation Pd:120W,Operating Frequency Min:3.1GHz,Operating Frequency Max:3.5GHz,MSL:- RoHS Compliant: Yes | 0 | |
| BLS6G3135-120 | NXP Semiconductors | RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, S BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET | 289 |
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| Imagen | Parte # | Descripción |
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Mfr.#: BLS6G3135-120112 OMO.#: OMO-BLS6G3135-120112-1190 |
Nuevo y original |
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Mfr.#: BLS6G3135-20 OMO.#: OMO-BLS6G3135-20-1190 |
Nuevo y original |
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Mfr.#: BLS6G3135-20112 OMO.#: OMO-BLS6G3135-20112-1190 |
Now Ampleon, BLS6G3135-20, LDMOS S-band radar power transistor, SOT608 (CDFM2) |
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Mfr.#: BLS6G3135S-120 OMO.#: OMO-BLS6G3135S-120-1190 |
Nuevo y original |
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Mfr.#: BLS6G3135S-120112 OMO.#: OMO-BLS6G3135S-120112-1190 |
BLS6G3135S-120/SOT502/TRAY |
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Mfr.#: BLS6G3135S-20 OMO.#: OMO-BLS6G3135S-20-1190 |
Nuevo y original |
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Mfr.#: BLS6G3135S-20112 OMO.#: OMO-BLS6G3135S-20112-1190 |
Now Ampleon, BLS6G3135S-20, LDMOS S-band radar power transistor, SOT608 (CDFM2) |
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Mfr.#: BLS6G3135S-120,112 |
RF MOSFET Transistors TRANS S-BAND RADAR LDMSO |
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Mfr.#: BLS6G3135S-20,112 |
RF MOSFET Transistors TRANS S-BAND RADAR LDMOS |
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Mfr.#: BLS6G3135-20,112 OMO.#: OMO-BLS6G3135-20-112-AMPLEON |
RF MOSFET Transistors LDMOS TNS |