 |  | | |
| PartNumber | BCV61CE6327HTSA1 | BCV61CE6327 | BCV61CE6327 , MAX6737XKR |
| Description | Bipolar Transistors - BJT NPN Silicon Double TRANSISTOR | ||
| Manufacturer | Infineon | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-143-4 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 30 V | - | - |
| Collector Base Voltage VCBO | 30 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 200 mV | - | - |
| Maximum DC Collector Current | 200 mA | - | - |
| Gain Bandwidth Product fT | 250 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BCV61 | - | - |
| DC Current Gain hFE Max | 800 | - | - |
| Packaging | Reel | - | - |
| Brand | Infineon Technologies | - | - |
| Continuous Collector Current | 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 420 | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 61C BCV BCV61CE6327XT E6327 SP000010887 | - | - |
| Unit Weight | 0.000388 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BCV61CE6327HTSA1 | Bipolar Transistors - BJT NPN Silicon Double TRANSISTOR | |
| BCV61CE6327 | Nuevo y original | ||
| BCV61CE6327 , MAX6737XKR | Nuevo y original | ||
| BCV61CE6327HTSA1 | TRANSISTOR NPN DOUBLE SOT-143 |