BCV61CE6327HTSA1

Mfr. #:: BCV61CE6327HTSA1
Fabricante:: Infineon Technologies
Descripción:: Bipolar Transistors - BJT NPN Silicon Double TRANSISTOR
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: BCV61CE6327HTSA1 Ficha de datos
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ECAD Model:

Atributo del producto
Valor de atributo

Fabricante:: Infineon

Categoria de producto:: Transistores bipolares - BJT

RoHS:: Y

Estilo de montaje:: SMD / SMT

Paquete / Caja:: SOT-143-4

Polaridad del transistor:: NPN

Configuración:: Doble

Voltaje colector-emisor VCEO Max:: 30 V

Colector- Voltaje base VCBO:: 30 V

Emisor- Voltaje base VEBO:: 6 V

Voltaje de saturación colector-emisor:: 200 mV

Corriente máxima del colector de CC:: 200 mA

Producto de ganancia de ancho de banda fT:: 250 MHz

Temperatura mínima de funcionamiento:: - 65 C

Temperatura máxima de funcionamiento:: + 150 C

Serie:: BCV61

Ganancia de corriente CC hFE Max:: 800

Embalaje:: Carrete

Marca:: Infineon Technologies

Corriente continua del colector:: 100 mA

Colector de CC / Ganancia base hfe Min:: 420

Pd - Disipación de energía:: 300 mW

Tipo de producto:: BJT - Transistores bipolares

Cantidad de paquete de fábrica:: 3000

Subcategoría:: Transistores

Parte # Alias:: 61C BCV BCV61CE6327XT E6327 SP000010887

Unidad de peso:: 0.000388 oz

Tags: BCV61CE6, BCV61CE, BCV61C, BCV61, BCV6, BCV

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BCV61CE6327HTSA1 Descripción

*** Electronic Components: Bipolar Transistors - BJT NPN Silicon Double TRANSISTOR

***ure Electronics: BCV61 Series NPN 30 V 100 mA SMT Silicon Double Transistor - SOT-143-4

***ow.cn: Trans GP BJT NPN 30V 0.1A 300mW Automotive 4-Pin SOT-143 T/R

***ark: ; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:30V; Continuous Collector Current, Ic:100mA; Collector Emitter Saturation Voltage, Vce(sat):0.6V; Power Dissipation, Pd:300mW; DC Current Gain Min (hfe):110 ;RoHS Compliant: Yes

***ineon: NPN Silicon Double Transistor | Summary of Features: To be used as a current mirror; Good thermal coupling and VBE matching; High current gain; Low collector-emitter saturation voltage; Pb-free (RoHS compliant) package; Qualified according AEC Q102 | Target Applications: For current mirror applications

***trelec: Transistor Polarity = NPN / Channels = 2 / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 30 / DC Current Gain (hFE) = 520 / Collector-Base Voltage (Vcbo) V = 30 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 250 / Power Dissipation (Pd) mW = 300 / Package Type = SOT-143 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Length mm = 2.9 / Width mm = 1.3 / Height mm = 1 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 200 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 900

***ment14 APAC: TRANSISTOR, DUAL, NPN, SOT-143; Module Configuration:Dual; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:300mW; DC Collector Current:100mA; DC Current Gain hFE:520; Transistor Case Style:SOT-143; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:600mV; Continuous Collector Current Ic Max:100mA; Current Ic @ Vce Sat:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:2mA; External Depth:2.6mm; External Length / Height:1mm; External Width:2.9mm; Gain Bandwidth ft Typ:250MHz; Hfe Min:110; No. of Transistors:2; Package / Case:SOT-143; Pin Configuration:a; Power Dissipation Pd:300mW; Power Dissipation Ptot Max:300mW; SMD Marking:1Ls; Termination Type:SMD; Voltage Vcbo:30V

***ponent Stockers USA: 100 mA 30 V NPN Si SMALL SIGNAL TRANSISTOR

***enic: 30V 250mW 100mA 420@2mA5V 100MHz 200mV@100mA5mA 2 NPN +150¡Í@(Tj) SOT-143B Bipolar Transistors - BJT ROHS

***: TRANS BIPOLAR

*** Stop Electro: RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon, NPN, TO-236AB

***ical: Trans RF BJT NPN 16V 0.08A 450mW Automotive 4-Pin SOT-143B T/R

***ark: Rf Transistor, Aec-Q101, Npn, Sot143-B Rohs Compliant: Yes

***nell: RF TRANSISTOR, AEC-Q101, NPN, SOT143-B; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 11GHz; Power Dissipation Pd: 450mW; DC Collector Current: 50mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-143B; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans RF BJT NPN 16V 0.065A 450mW Automotive 4-Pin(3+Tab) SOT-143B T/R

*** Semiconductors SCT: NPN Wideband Silicon RF Transistor, SOT143B, RoHS

***et: Trans GP NPN 12V 0.04A 4-Pin SOT-143B T/R

***hardson RFPD: RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT

***el Electronic: Motor / Motion / Ignition Controllers & Drivers H-BRIDGE MOTOR DRIVER

***i-Key: RF TRANS NPN 12V 11GHZ SOT143B

***nell: TRANSISTOR, AUTO, RF, NPN, 12V, 11GHZ; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 11GHz; Power Dissipation Pd: 450mW; DC Collector Current: 40mA; DC Current Gain hFE: 95hFE; RF Transistor Case: SOT-143B; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: BFU530 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans GP BJT NPN 16V 0.05A 4-Pin(3+Tab) SOT-143B T/R

*** Semiconductors SCT: NPN Wideband Silicon RF Transistor, SOT143B, RoHS

***hardson RFPD: RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT

***i-Key: RF TRANS NPN 12V 10.5GHZ SOT143B

***nell: TRANSISTOR, AEC-Q101, RF, NPN, 12V; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 10.5GHz; Power Dissipation Pd: 450mW; DC Collector Current: 5mA; DC Current Gain hFE: 95hFE; RF Transistor Case: SOT-143B; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: BFU520 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***el Electronic: Voltage Regulators - Standard 1.2V POWER SUPPLY IC

***ical: Trans GP BJT NPN 16V 0.05A 4-Pin(3+Tab) SOT-143B T/R

*** Semiconductors SCT: NPN Wideband Silicon RF Transistor, SOT143B, RoHS

***hardson RFPD: RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT

***i-Key: RF TRANS NPN 12V 10.5GHZ SOT143B

***nell: RF TRANSISTOR, AEC-Q101, NPN, SOT-143B-4; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 10.5GHz; Power Dissipation Pd: 450mW; DC Collector Current: 5mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-143B; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: BFU5 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***el Electronic: Linear Voltage Regulators 2.5V POWER SUPPLY IC

*** Americas: REEL 7"" Q3/T4 *STANDARD MARK SMD LOW PROFILE

***ark: Trans Gp Bjt Npn 16V 0.065A Automotive 4-Pin(3+Tab) Sot-143B T/r Rohs Compliant: Yes

*** Semiconductors SCT: NPN Wideband Silicon RF Transistor, SOT143B, RoHS

***et: Trans GP NPN 12V 0.04A 4-Pin SOT-143B T/R

***hardson RFPD: RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT

***i-Key: RF TRANS NPN 12V 11GHZ SOT143B

Market price

Parte #	Mfg.	Descripción	Valores	Precio
BCV61CE6327HTSA1 DISTI # V36:1790_06391725	Infineon Technologies AG	Trans GP BJT NPN 30V 0.1A Automotive 4-Pin(3+Tab) SOT-143 T/R RoHS: Compliant	6000	45000:$0.0655 24000:$0.0665 9000:$0.0706 3000:$0.0779
BCV61CE6327HTSA1 DISTI # V72:2272_06391725	Infineon Technologies AG	Trans GP BJT NPN 30V 0.1A Automotive 4-Pin(3+Tab) SOT-143 T/R RoHS: Compliant	0
BCV61CE6327HTSA1 DISTI # BCV61CE6327HTSA1CT-ND	Infineon Technologies AG	TRANSISTOR NPN DOUBLE SOT-143 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4503In Stock	1000:$0.1036 500:$0.1347 100:$0.1969 10:$0.3160 1:$0.4200
BCV61CE6327HTSA1 DISTI # BCV61CE6327HTSA1DKR-ND	Infineon Technologies AG	TRANSISTOR NPN DOUBLE SOT-143 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4503In Stock	1000:$0.1036 500:$0.1347 100:$0.1969 10:$0.3160 1:$0.4200
BCV61CE6327HTSA1 DISTI # BCV61CE6327HTSA1TR-ND	Infineon Technologies AG	TRANSISTOR NPN DOUBLE SOT-143 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call	75000:$0.0671 30000:$0.0729 15000:$0.0780 6000:$0.0855 3000:$0.0905
BCV61CE6327HTSA1 DISTI # 33627006	Infineon Technologies AG	Trans GP BJT NPN 30V 0.1A Automotive 4-Pin(3+Tab) SOT-143 T/R RoHS: Compliant	6000	45000:$0.0655 24000:$0.0665 9000:$0.0706 3000:$0.0779
BCV61CE6327HTSA1 DISTI # BCV61CE6327HTSA1	Infineon Technologies AG	Trans GP BJT NPN 30V 0.1A 4-Pin SOT-143 T/R - Bulk (Alt: BCV61CE6327HTSA1) Min Qty: 6250 Container: Bulk	Americas - 0
BCV61CE6327HTSA1 DISTI # BCV61CE6327HTSA1	Infineon Technologies AG	Trans GP BJT NPN 30V 0.1A 4-Pin SOT-143 T/R - Tape and Reel (Alt: BCV61CE6327HTSA1) RoHS: Compliant Min Qty: 9000 Container: Reel	Americas - 0	90000:$0.0469 45000:$0.0477 27000:$0.0494 18000:$0.0512 9000:$0.0532
BCV61CE6327HTSA1 DISTI # 25M7679	Infineon Technologies AG	BIPOLAR TRANSISTOR,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:30V,Power Dissipation Pd:300mW,DC Collector Current:100mA,DC Current Gain hFE:100hFE,No. of Pins:4Pins,Operating Temperature Max:150°C RoHS Compliant: Yes	0	1000:$0.1040 500:$0.1140 250:$0.1250 100:$0.1350 50:$0.1950 25:$0.2540 10:$0.3140 1:$0.4800
BCV 61C E6327 DISTI # 726-BCV61CE6327	Infineon Technologies AG	Bipolar Transistors - BJT NPN Silicon Double TRANSISTOR RoHS: Compliant	8983	1:$0.3800 10:$0.2720 100:$0.1250 1000:$0.0960 3000:$0.0820 9000:$0.0750 24000:$0.0700 45000:$0.0690
BCV61CE6327HTSA1 DISTI # 726-BCV61CE6327HTSA1	Infineon Technologies AG	Bipolar Transistors - BJT NPN Silicon Double TRANSISTOR RoHS: Compliant	743	1:$0.3800 10:$0.2720 100:$0.1250 1000:$0.0960 3000:$0.0820 9000:$0.0750 24000:$0.0700 45000:$0.0690
BCV61CE6327HTSA1 DISTI # 287639	Nexperia	TRANSISTOR NPN/NPN CURRENT MIRROR SOT143, PK	1025	1000:£0.0400 500:£0.0420 250:£0.0440 5:£0.3960
BCV61CE6327HTSA1 DISTI # 8922396P	Infineon Technologies AG	DUAL TRANSISTOR BJT NPN 30V 0.1A SOT143, RL	6650	6000:£0.0580 2400:£0.0670 1200:£0.0770 240:£0.0890
BCV61CE6327HTSA1 DISTI # 1056514RL	Infineon Technologies AG	TRANSISTOR, DUAL, NPN, SOT-143 RoHS: Compliant	0	45000:$0.1070 24000:$0.1080 9000:$0.1160 3000:$0.1270 1000:$0.1480 100:$0.1920 10:$0.4190
BCV61CE6327HTSA1 DISTI # 1056514	Infineon Technologies AG	TRANSISTOR, DUAL, NPN, SOT-143 RoHS: Compliant	281	45000:$0.1070 24000:$0.1080 9000:$0.1160 3000:$0.1270 1000:$0.1480 100:$0.1920 10:$0.4190
BCV61CE6327HTSA1 DISTI # 1056514	Infineon Technologies AG	TRANSISTOR, DUAL, NPN, SOT-143 RoHS: Compliant	828	500:£0.0775 250:£0.0950 100:£0.1000 25:£0.2280 5:£0.2370

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Disponibilidad

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En orden:: 2726
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Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,38 US$~~; ~~0,38 US$~~

10: ~~0,27 US$~~; ~~2,72 US$~~

100: ~~0,12 US$~~; ~~12,50 US$~~

1000: ~~0,10 US$~~; ~~96,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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BCV61CE6327HTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes