AUIRL1404ZST

AUIRL1404ZSTRL vs AUIRL1404ZSTRR vs AUIRL1404ZSTRLPBF

 
PartNumberAUIRL1404ZSTRLAUIRL1404ZSTRRAUIRL1404ZSTRLPBF
DescriptionMOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhmsRF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
ManufacturerInfineonInternational Rectifier-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current180 A--
Rds On Drain Source Resistance5.9 mOhms--
Vgs Gate Source Voltage16 V--
Qg Gate Charge75 nC--
Minimum Operating Temperature- 55 C- 55 C-
Pd Power Dissipation200 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
PackagingReelReel-
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel1 N-Channel-
Width9.25 mm--
BrandInfineon Technologies--
Fall Time49 ns49 ns-
Product TypeMOSFET--
Rise Time180 ns180 ns-
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time30 ns30 ns-
Typical Turn On Delay Time19 ns19 ns-
Part # AliasesSP001518266--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-200 W-
Vgs Gate Source Voltage-16 V-
Id Continuous Drain Current-180 A-
Vds Drain Source Breakdown Voltage-40 V-
Rds On Drain Source Resistance-5.9 mOhms-
Qg Gate Charge-75 nC-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
AUIRL1404ZSTRL MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
AUIRL1404ZSTRR RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
AUIRL1404ZSTRL MOSFET N-CH 40V 160A D2PAK
AUIRL1404ZSTRLPBF Nuevo y original
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