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AUIRL1404ZSTRL

AUIRL1404ZSTRL
Mfr. #:
AUIRL1404ZSTRL
Fabricante:
Infineon Technologies
Descripción:
MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AUIRL1404ZSTRL Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Id - Corriente de drenaje continua:
180 A
Rds On - Resistencia de la fuente de drenaje:
5.9 mOhms
Vgs - Voltaje puerta-fuente:
16 V
Qg - Carga de puerta:
75 nC
Temperatura mínima de funcionamiento:
- 55 C
Pd - Disipación de energía:
200 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon Technologies
Otoño:
49 ns
Tipo de producto:
MOSFET
Hora de levantarse:
180 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
30 ns
Tiempo típico de retardo de encendido:
19 ns
Parte # Alias:
SP001518266
Unidad de peso:
0.139332 oz
Tags
AUIRL1404ZST, AUIRL1404ZS, AUIRL1404Z, AUIRL1, AUIRL, AUIR, AUI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
AUIRL1404ZS N-channel MOSFET Transistor; 180 A; 40 V; 4-Pin D2PAK
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MOSFET,W DIODE,N CH,40V,160A,D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating ;RoHS Compliant: Yes
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 40 V 2.5 mOhm 90 nC HEXFET® Power Mosfet - D2PAK
***et
Trans MOSFET N-CH 40V 208A 3-Pin(2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 40V, 120A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 208 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 2 / Gate-Source Voltage V = 20 / Fall Time ns = 68 / Rise Time ns = 68 / Turn-OFF Delay Time ns = 115 / Turn-ON Delay Time ns = 24 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 208
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 40 V 0.004 Ohm 140 nC HEXFET® Power Mosfet - TO-262-3
***nell
MOSFET, N, 40V, 160A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power D
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Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
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Trans MOSFET N-CH Si 40V 193A Automotive 3-Pin(2+Tab) D2PAK T/R
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Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
Single N-Channel 40 V 2.3 mOhm 107 nC Automotive HEXFET® Power Mosfet - D2PAK
***nell
MOSFET, 40V, 120A, Q101, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Battery Switch; Brushed Motor Drive; Brushless Motor Drive; DC-DC; Electric Power Steering; Glowplug; PTC Heater; Relay Replacement
***r Electronics
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH Si 40V 120A Automotive 3-Pin(2+Tab) H2PAK T/R
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Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-2 package
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Ceramic Capacitors 1000pF Radial, Disc ±10% B Bulk 1 (Unlimited) General Purpose Through Hole -25°C~105°C CAP CER 1000PF 2KV RADIAL
***ow.cn
Trans MOSFET P-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK
***ure Electronics
Single P-Channel 40 V 4 mOhm 375 W SMT Automotive Power Mosfet - TO-263
***ark
P-Channel 40-V (D-S) 175C Mosfet Rohs Compliant: Yes
***ment14 APAC
MOSFET, P-CH, 40V, 120A, 175DEG C, 375W;
***S
MOSFET P-CHANNEL 40V 120V TO-263
***r Electronics
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-6 package
***et
Trans MOSFET N-CH 40V 120A 6-Pin H2PAK T/R
***icroelectronics SCT
Automotive Power Discrete, 40V, 120A, H2PAK-6, Tape and Reel
***icroelectronics
N-channel 40 V, 2.7 mOhm typ., 160 A STripFET F6 Power MOSFET in H2PAK-2 package
***ca Corp
Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***et
Trans MOSFET N-CH 40V 120A 3-Pin H2PAK-2 T/R
***(Formerly Allied Electronics)
MOSFET 40V 0.032 / 0.046 OHM LL
***icroelectronics SCT
Power MOSFETs, 40V, 160A, H2PAK-2, Tape and Reel
***S
French Electronic Distributor since 1988
Parte # Mfg. Descripción Valores Precio
AUIRL1404ZSTRL
DISTI # AUIRL1404ZSTRL-ND		Infineon Technologies AGMOSFET N-CH 40V 160A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 800:$1.9813
AUIRL1404ZSTRL
DISTI # AUIRL1404ZSTRL		Infineon Technologies AGTrans MOSFET N-CH 40V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRL1404ZSTRL)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$1.6900
  • 1600:$1.5900
  • 3200:$1.5900
  • 4800:$1.4900
  • 8000:$1.4900
AUIRL1404ZSTRL
DISTI # SP001518266		Infineon Technologies AGTrans MOSFET N-CH 40V 180A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001518266)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 800:€1.5900
  • 1600:€1.5900
  • 3200:€1.4900
  • 4800:€1.3900
  • 8000:€1.2900
AUIRL1404ZSTRL
DISTI # 942-AUIRL1404ZSTRL		Infineon Technologies AGMOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
RoHS: Compliant		0
  • 1:$3.1800
  • 10:$2.7100
  • 100:$2.3500
  • 250:$2.2300
  • 500:$2.0000
  • 800:$1.6900
  • 2400:$1.6000
  • 4800:$1.5400
Imagen Parte # Descripción
AUIRL1404Z

Mfr.#: AUIRL1404Z

OMO.#: OMO-AUIRL1404Z

 MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
AUIRL1404ZSTRL

Mfr.#: AUIRL1404ZSTRL

OMO.#: OMO-AUIRL1404ZSTRL

 MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
AUIRL1404S

Mfr.#: AUIRL1404S

OMO.#: OMO-AUIRL1404S

 MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
AUIRL1404Z

Mfr.#: AUIRL1404Z

OMO.#: OMO-AUIRL1404Z-INFINEON-TECHNOLOGIES

 IGBT Transistors MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
AUIRL1404S

Mfr.#: AUIRL1404S

OMO.#: OMO-AUIRL1404S-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
AUIRL1404ZS

Mfr.#: AUIRL1404ZS

OMO.#: OMO-AUIRL1404ZS-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
AUIRL1404STRL

Mfr.#: AUIRL1404STRL

OMO.#: OMO-AUIRL1404STRL-INFINEON-TECHNOLOGIES

 MOSFET N-CH 40V 160A D2PAK
AUIRL1404ZSTRLPBF

Mfr.#: AUIRL1404ZSTRLPBF

OMO.#: OMO-AUIRL1404ZSTRLPBF-1190

 Nuevo y original
AUIRL1404ZL

Mfr.#: AUIRL1404ZL

OMO.#: OMO-AUIRL1404ZL-INFINEON-TECHNOLOGIES

 MOSFET N-CH 40V 160A TO262
AUIRL1404ZSTRL

Mfr.#: AUIRL1404ZSTRL

OMO.#: OMO-AUIRL1404ZSTRL-INFINEON-TECHNOLOGIES

 MOSFET N-CH 40V 160A D2PAK
Disponibilidad
Valores:
800
En orden:
2783
Ingrese la cantidad:
El precio actual de AUIRL1404ZSTRL es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,18 US$
3,18 US$
10
2,71 US$
27,10 US$
100
2,35 US$
235,00 US$
250
2,23 US$
557,50 US$
500
2,00 US$
1 000,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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