PartNumber | ATF-511P8-TR1 | ATF-511P8-TR2 | ATF-511P8-TR1G |
Description | RF JFET Transistors Transistor GaAs High Linearity | RF JFET Transistors Transistor GaAs High Linearity | |
Manufacturer | Broadcom Limited | Broadcom / Avago | AVAGO |
Product Category | RF JFET Transistors | Transistors - FETs, MOSFETs - Single | IC Chips |
RoHS | Y | - | - |
Transistor Type | EpHEMT | EpHEMT | - |
Technology | GaAs | GaAs | - |
Gain | 14.8 dB | 14.8 dB | - |
Vds Drain Source Breakdown Voltage | 7 V | - | - |
Vgs Gate Source Breakdown Voltage | - 5 V to 1 V | - | - |
Id Continuous Drain Current | 1 A | - | - |
Maximum Drain Gate Voltage | - 5 V to + 1 V | - 5 V to + 1 V | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 3 W | - | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | LPCC-8 | - | - |
Packaging | Reel | Reel | - |
Configuration | Single Dual Source | Single Dual Source | - |
Operating Frequency | 2 GHz | 2 GHz | - |
Product | RF JFET | - | - |
Type | GaAs EpHEMT | - | - |
Brand | Broadcom / Avago | - | - |
Forward Transconductance Min | 2178 mmho | - | - |
NF Noise Figure | 1.4 dB | - | - |
P1dB Compression Point | 30 dBm | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Package Case | - | LPCC-8 | - |
Pd Power Dissipation | - | 3 W | - |
Id Continuous Drain Current | - | 1 A | - |
Vds Drain Source Breakdown Voltage | - | 7 V | - |
Forward Transconductance Min | - | 2178 mmho | - |
Vgs Gate Source Breakdown Voltage | - | - 5 V to 1 V | - |
NF Noise Figure | - | 1.4 dB | - |
P1dB Compression Point | - | 30 dBm | - |