ATF-511P8-T

ATF-511P8-TR1 vs ATF-511P8-TR2 vs ATF-511P8-TR1G

 
PartNumberATF-511P8-TR1ATF-511P8-TR2ATF-511P8-TR1G
DescriptionRF JFET Transistors Transistor GaAs High LinearityRF JFET Transistors Transistor GaAs High Linearity
ManufacturerBroadcom LimitedBroadcom / AvagoAVAGO
Product CategoryRF JFET TransistorsTransistors - FETs, MOSFETs - SingleIC Chips
RoHSY--
Transistor TypeEpHEMTEpHEMT-
TechnologyGaAsGaAs-
Gain14.8 dB14.8 dB-
Vds Drain Source Breakdown Voltage7 V--
Vgs Gate Source Breakdown Voltage- 5 V to 1 V--
Id Continuous Drain Current1 A--
Maximum Drain Gate Voltage- 5 V to + 1 V- 5 V to + 1 V-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation3 W--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseLPCC-8--
PackagingReelReel-
ConfigurationSingle Dual SourceSingle Dual Source-
Operating Frequency2 GHz2 GHz-
ProductRF JFET--
TypeGaAs EpHEMT--
BrandBroadcom / Avago--
Forward Transconductance Min2178 mmho--
NF Noise Figure1.4 dB--
P1dB Compression Point30 dBm--
Product TypeRF JFET Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Package Case-LPCC-8-
Pd Power Dissipation-3 W-
Id Continuous Drain Current-1 A-
Vds Drain Source Breakdown Voltage-7 V-
Forward Transconductance Min-2178 mmho-
Vgs Gate Source Breakdown Voltage-- 5 V to 1 V-
NF Noise Figure-1.4 dB-
P1dB Compression Point-30 dBm-
Fabricante Parte # Descripción RFQ
Broadcom / Avago
Broadcom / Avago
ATF-511P8-TR1 RF JFET Transistors Transistor GaAs High Linearity
ATF-511P8-TR2 RF JFET Transistors Transistor GaAs High Linearity
ATF-511P8-TR1 RF JFET Transistors Transistor GaAs High Linearity
ATF-511P8-TR1G Nuevo y original
ATF-511P8-TR1GG Nuevo y original
Top