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| PartNumber | ATF-331M4-TR2 | ATF-331M4-TR1 |
| Description | RF JFET Transistors Transistor GaAs Low Noise | RF JFET Transistors Transistor GaAs Low Noise |
| Manufacturer | Broadcom Limited | Broadcom Limited |
| Product Category | RF JFET Transistors | RF JFET Transistors |
| RoHS | Y | Y |
| Transistor Type | pHEMT | pHEMT |
| Technology | GaAs | GaAs |
| Gain | 15 dB | 15 dB |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 5.5 V | 5.5 V |
| Vgs Gate Source Breakdown Voltage | - 5 V | - 5 V |
| Id Continuous Drain Current | 305 mA | 305 mA |
| Maximum Drain Gate Voltage | - 5 V | - 5 V |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 160 C | + 160 C |
| Pd Power Dissipation | 400 mW | 400 mW |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | Mini PAK | Mini PAK |
| Packaging | Reel | Reel |
| Configuration | Single Dual Source | Single Dual Source |
| Height | 0.7 mm | 0.7 mm |
| Length | 1.44 mm | 1.44 mm |
| Operating Frequency | 2 GHz | 2 GHz |
| Product | RF JFET | RF JFET |
| Type | GaAs pHEMT | GaAs pHEMT |
| Width | 1.2 mm | 1.2 mm |
| Brand | Broadcom / Avago | Broadcom / Avago |
| Forward Transconductance Min | 440 mmho | 440 mmho |
| NF Noise Figure | 0.6 dB | 0.6 dB |
| P1dB Compression Point | 19 dBm | 19 dBm |
| Product Type | RF JFET Transistors | RF JFET Transistors |
| Factory Pack Quantity | 10000 | 3000 |
| Subcategory | Transistors | Transistors |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Broadcom / Avago |
ATF-331M4-TR2 | RF JFET Transistors Transistor GaAs Low Noise | |
| ATF-331M4-TR1 | RF JFET Transistors Transistor GaAs Low Noise | ||
| ATF-331M4-TR2 | IC PHEMT LOW NOISE 2GHZ MINIPAK | ||
| ATF-331M4-TR1 | RF JFET Transistors Transistor GaAs Low Noise | ||
| ATF-331M4-TR1G | Nuevo y original |