PartNumber | APTGT150A120T3AG | APTGT150A120G | APTGT150A120D1G |
Description | IGBT Modules DOR CC3066 | IGBT Modules DOR CC6111 | IGBT Modules Power Module - IGBT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
RoHS | Y | Y | Y |
Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | Dual | Dual | Dual |
Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | - |
Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | - |
Continuous Collector Current at 25 C | 220 A | 220 A | - |
Gate Emitter Leakage Current | 400 nA | 400 nA | - |
Pd Power Dissipation | 833 W | 690 W | - |
Package / Case | SP3-32 | SP6 | - |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
Packaging | Tube | Tube | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 1 | 1 | 50 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | - | 3.880136 oz | - |