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APTGT150H60TG

APTGT150H60TG
Mfr. #:
APTGT150H60TG
Fabricante:
Microchip / Microsemi
Descripción:
IGBT Modules CC4085
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
APTGT150H60TG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
Módulos IGBT
RoHS:
Y
Producto:
Módulos de silicio IGBT
Configuración:
Puente completo
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
1.5 V
Corriente continua del colector a 25 C:
225 A
Corriente de fuga puerta-emisor:
400 nA
Pd - Disipación de energía:
480 W
Paquete / Caja:
SP4
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 100 C
Embalaje:
Tubo
Marca:
Microchip / Microsemi
Estilo de montaje:
Montaje en chasis
Voltaje máximo del emisor de puerta:
20 V
Tipo de producto:
Módulos IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Unidad de peso:
3.880136 oz
Tags
APTGT150H, APTGT15, APTGT1, APTGT, APTG, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 600V 225A 480000mW 20-Pin Case SP-4 Tube
***ark
Pm-Igbt-Tfs-Sp4 Sp4 Tube Rohs Compliant: Yes |Microchip APTGT150H60TG
***rochip SCT
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***i-Key
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***ark
Pm-Igbt-Tfs-Sp1 Sp1 Tube Rohs Compliant: Yes |Microchip APTGT150DA60T1G
*** Stop Electro
Insulated Gate Bipolar Transistor, 225A I(C), 600V V(BR)CES, N-Channel
***et
Trans IGBT Module N-CH 600V 225A 12-Pin Case SP1
***rochip SCT
High Voltage Power Module, Boost chopper, 600V, RoHS
***el Electronic
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***ical
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***ure Electronics
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***ineon SCT
600 V, 150 A dual IGBT module, AG-34MM-1, RoHS
***ineon
Our well-known 34 mm 600V dual IGBT modules are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; ups
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***trelec
IGBT module Connection: 3 x M5 Fastening: 2 x M6 Configuration: Half-Bridge Housing type: 34 mm Collector-emitter saturation voltage: 2.45 V Collector-emitter voltage: 600 V Energy dissipation during make-time: 4.6 mJ Energy dissipation during turn-off time: 6.3 mJ
***ineon
Our well-known 34 mm 600V dual IGBT modules are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; ups
***ical
Trans IGBT Module N-CH 600V 37A 115000mW 23-Pin EASY1B-1 Tray
***ark
Igbt Module; Transistor Polarity:n Channel; Dc Collector Current:30A; Collector Emitter Saturation Voltage Vce(On):600V; Power Dissipation Pd:115W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:23Pins; Product Range:- Rohs Compliant: Yes
***ineon
EasyPIM 1B 600V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon
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Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
***ark
Pm-Igbt-Tfs-Sp1 Sp1 Tube Rohs Compliant: Yes |Microchip APTGT75DA60T1G
***et
Trans IGBT Module N-CH 600V 100A 12-Pin Case SP1
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Imagen Parte # Descripción
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 IGBT 1200V 220A 690W SP4
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de APTGT150H60TG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
100
120,47 US$
12 047,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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