APTGF90H

APTGF90H60T3G vs APTGF90H60T vs APTGF90H60TG

 
PartNumberAPTGF90H60T3GAPTGF90H60TAPTGF90H60TG
DescriptionIGBT Modules Power Module - IGBTPOWER IGBT TRANSISTORIGBT MODULE NPT FULL BRIDGE SP4
ManufacturerMicrochipMicrosemi CorporationMicrosemi Corporation
Product CategoryIGBT ModulesIGBTs - ModulesIGBTs - Modules
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationQuadFull Bridge InverterFull Bridge Inverter
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.1 V--
Continuous Collector Current at 25 C120 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation416 W--
Package / CaseSP-3--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingBulk--
Height11.5 mm--
Length73.4 mm--
Operating Temperature Range- 40 C to + 150 C--
Width40.8 mm--
BrandMicrochip / Microsemi--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity50--
SubcategoryIGBTs--
Series---
Package Case-SP3SP4
Mounting Type-Chassis MountChassis Mount
Supplier Device Package-SP3SP4
Input-StandardStandard
Power Max-416W416W
Current Collector Ic Max-120A110A
Voltage Collector Emitter Breakdown Max-600V600V
Current Collector Cutoff Max-250μA250μA
IGBT Type-NPTNPT
Vce on Max Vge Ic-2.45V @ 15V, 100A2.5V @ 15V, 90A
Input Capacitance Cies Vce-4.4nF @ 25V4.3nF @ 25V
NTC Thermistor-YesYes
Fabricante Parte # Descripción RFQ
Microchip / Microsemi
Microchip / Microsemi
APTGF90H60T3G IGBT Modules Power Module - IGBT
APTGF90H60T3G IGBT Modules
APTGF90H60TG IGBT MODULE NPT FULL BRIDGE SP4
APTGF90H60T POWER IGBT TRANSISTOR
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