PartNumber | APT60GF120JRDQ3 | APT60GA60JD60 | APT60GF60JU2 |
Description | IGBT Modules FG, IGBT-COMBI,1200V, 60A, SOT-227 | IGBT Modules FG, IGBT-COMBI, 600V, SOT-227 | IGBT Modules |
Manufacturer | Microchip | Microchip | Microsemi Corporation |
Product Category | IGBT Modules | IGBT Modules | IGBTs - Modules |
RoHS | Y | Y | - |
Product | IGBT Silicon Carbide Modules | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 1.2 kV | 600 V | - |
Collector Emitter Saturation Voltage | 2.5 V | 2 V | 2.1 V |
Continuous Collector Current at 25 C | 149 A | 112 A | 93 A |
Gate Emitter Leakage Current | 100 nA | 100 nA | 100 nA |
Pd Power Dissipation | 625 W | 356 W | - |
Package / Case | ISOTOP-4 | SOT-227-4 | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Tube | Tube | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | - |
Mounting Style | SMD/SMT | Chassis Mount | Screw |
Maximum Gate Emitter Voltage | 30 V | 30 V | +/- 20 V |
Product Type | IGBT Modules | IGBT Modules | - |
Factory Pack Quantity | 1 | 1 | - |
Subcategory | IGBTs | IGBTs | - |
Height | - | 9.6 mm | - |
Length | - | 38.2 mm | - |
Operating Temperature Range | - | - 55 C to + 150 C | - |
Width | - | 25.4 mm | - |
Tradename | - | POWER MOS 8, ISOTOP | ISOTOP |
Unit Weight | - | 1.058219 oz | 1.058219 oz |
Series | - | - | - |
Package Case | - | - | ISOTOP |
Mounting Type | - | - | Chassis Mount |
Supplier Device Package | - | - | SOT-227 |
Input | - | - | Standard |
Power Max | - | - | 378W |
Current Collector Ic Max | - | - | 93A |
Voltage Collector Emitter Breakdown Max | - | - | 600V |
Current Collector Cutoff Max | - | - | 80μA |
IGBT Type | - | - | NPT |
Vce on Max Vge Ic | - | - | 2.5V @ 15V, 60A |
Input Capacitance Cies Vce | - | - | 3.59nF @ 25V |
NTC Thermistor | - | - | No |
Pd Power Dissipation | - | - | 378 W |
Collector Emitter Voltage VCEO Max | - | - | 600 V |