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| PartNumber | APT50GN120L2DQ2G | APT50GN120B2G |
| Description | IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS | IGBT Transistors FG, IGBT,1200V, T-MAX, RoHS |
| Manufacturer | Microchip | Microchip |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-264-3 | - |
| Mounting Style | Through Hole | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 1.2 kV | - |
| Collector Emitter Saturation Voltage | 1.7 V | - |
| Maximum Gate Emitter Voltage | 30 V | - |
| Continuous Collector Current at 25 C | 134 A | - |
| Pd Power Dissipation | 543 W | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Packaging | Tube | Tube |
| Continuous Collector Current Ic Max | 134 A | - |
| Height | 5.21 mm | - |
| Length | 26.49 mm | - |
| Operating Temperature Range | - 55 C to + 150 C | - |
| Width | 20.5 mm | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi |
| Continuous Collector Current | 134 A | - |
| Gate Emitter Leakage Current | 600 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1 | 1 |
| Subcategory | IGBTs | IGBTs |
| Unit Weight | 0.373904 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT50GN120L2DQ2G | IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS | |
| APT50GN120B2G | IGBT Transistors FG, IGBT,1200V, T-MAX, RoHS | ||
| APT50GN120L2DQ2G | IGBT Transistors | ||
| APT50GN120B2G | IGBT 1200V 134A 543W TO-247 | ||
| APT50GN120B2 | Nuevo y original | ||
| APT50GN120L2DQ2 | Nuevo y original |