PartNumber | APT43GA90B | APT43F60L | APT43F60B2 |
Description | IGBT Transistors FG, IGBT, 900V, TO-247 | MOSFET FG, FREDFET, 600V, TO-264 | MOSFET FG, FREDFET, 600V, TO-247 T-MAX |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Transistors | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Packaging | Tube | Tube | Tube |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Product Type | IGBT Transistors | MOSFET | MOSFET |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | MOSFETs | MOSFETs |
Mounting Style | - | Through Hole | Through Hole |
Package / Case | - | TO-264-3 | TO-247-3 |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 600 V | 600 V |
Id Continuous Drain Current | - | 45 A | 45 A |
Rds On Drain Source Resistance | - | 150 mOhms | 120 mOhms |
Vgs th Gate Source Threshold Voltage | - | 4 V | 2.5 V |
Vgs Gate Source Voltage | - | 30 V | 30 V |
Qg Gate Charge | - | 215 nC | 215 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 780 W | 780 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Forward Transconductance Min | - | 42 S | 42 S |
Fall Time | - | 44 ns | 44 ns |
Rise Time | - | 55 ns | 55 ns |
Typical Turn Off Delay Time | - | 145 ns | 145 ns |
Typical Turn On Delay Time | - | 48 ns | 48 ns |
Unit Weight | - | 0.352740 oz | 0.211644 oz |
Number of Channels | - | - | 1 Channel |
Transistor Type | - | - | 1 N-Channel |