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APT43GA90BD30

APT43GA90BD30
Mfr. #:
APT43GA90BD30
Fabricante:
Microchip / Microsemi
Descripción:
IGBT Transistors FG, IGBT-COMBI, 900V, TO-247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
APT43GA90BD30 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT43GA90BD30 DatasheetAPT43GA90BD30 Datasheet (P4-P6)APT43GA90BD30 Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
900 V
Voltaje de saturación colector-emisor:
2.5 V
Voltaje máximo del emisor de puerta:
30 V
Corriente continua del colector a 25 C:
78 A
Pd - Disipación de energía:
337 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
78 A
Altura:
5.31 mm
Longitud:
21.46 mm
Rango de temperatura de funcionamiento:
- 55 C to + 150 C
Ancho:
16.26 mm
Marca:
Microchip / Microsemi
Corriente continua del colector:
78 A
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Unidad de peso:
1.340411 oz
Tags
APT43, APT4, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 900V 75A 337000mW 3-Pin(3+Tab) TO-247
***rochip
IGBT PT MOS 8 Combi 900 V 43 A TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 78A I(C), 900V V(BR)CES, N-Channel, TO-247
***ical
Trans IGBT Chip N-CH 900V 75A 400000mW 3-Pin(3+Tab) TO-247AD
***ure Electronics
IXGH Series 900 Vce 75 A 20 ns t(on) HiPerFAST IGBT w/ Fast Diode - TO-247AD
***ca Corp
Insulated Gate Bipolar Transistor, 75A I(C), 900V V(BR)CES, N-Channel, TO-247AD
***el Electronic
OP Amp Single Volt Fdbk R-R I/O ±6V/12V 8-Pin SOIC N T/R
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 900V 90A 500000mW 3-Pin(3+Tab) TO-247AD
***ure Electronics
IXYH40N90C3D1 900 Vce 40 A 27 ns t(on) GenX3 High-Speed IGBT - TO-247-3
***el Electronic
IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT
***p One Stop Global
Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.25 V Current release time: 150 ns Power dissipation: 200 W
***nell
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
***ark
MOSFET; Transistor Type:MOSFET; Package/Case:TO-247AC; Power Dissipation, Pd:200W; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:51A; Mounting Type:Through Hole; Voltage Rating:900V ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WPbF; Fall Time Max:220ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V
***p One Stop Global
Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
900V WARP 20-100 KHZ COPACK IGBT IN A TO-247AC PACKAGE | Infineon IRG4PF50WDPBF
***ure Electronics
IRG4PF50WDPBF Series 900 V 28 A N-Channel UltraFast IGBT - TO-247AC
***ineon SCT
Copacked 900V IGBT in a TO-247AC package with ultrafast 20-100 kHz ultrafast, ultrasoft recovery anti-parallel diode, TO247COPAK-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.7 V Current release time: 190 ns Power dissipation: 200 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:51A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***nell
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.25V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cu
***ment14 APAC
IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.25V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WDPbF; Fall Time Max:190ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:52ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V
***ark
IGBT PT MOS 8 COMBI 900 V 35 A TO-247 3 TO-247 TUBE ROHS COMPLIANT: YES
***et
Trans IGBT Chip N-CH 900V 63A 3-Pin(3+Tab) TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 63A I(C), 900V V(BR)CES, N-Channel, TO-247AD
***th Star Micro
Insulated Gate Bipolar Transistor - Power MOS 8
***ical
Trans IGBT Chip N-CH 900V 63A 290000mW 3-Pin(3+Tab) TO-247 Tube
***rochip
IGBT PT MOS 8 Single 900 V 35 A TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 63A I(C), 900V V(BR)CES, N-Channel, TO-247
***ure Electronics
IGBT Transistors FG, IGBT, 900V, TO-247
Parte # Mfg. Descripción Valores Precio
APT43GA90BD30
DISTI # APT43GA90BD30-ND		Microsemi CorporationIGBT 900V 78A 337W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		48In Stock
  • 510:$6.2418
  • 270:$6.8458
  • 120:$7.4499
  • 30:$8.2553
  • 10:$9.0610
  • 1:$10.0700
APT43GA90BD30
DISTI # 494-APT43GA90BD30		Microsemi CorporationIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
RoHS: Compliant		72
  • 1:$9.4000
  • 10:$8.4600
  • 25:$7.7000
  • 50:$7.1800
  • 100:$6.9500
  • 250:$6.3400
  • 500:$5.7900
  • 1000:$4.9000
APT43GA90BD30
DISTI # APT43GA90BD30		Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant		0
  • 67:$5.0300
  • 100:$4.9000
  • 500:$4.8400
Imagen Parte # Descripción
HCPL-316J-000E

Mfr.#: HCPL-316J-000E

OMO.#: OMO-HCPL-316J-000E

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BPW17N

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VNI4140KTR

Mfr.#: VNI4140KTR

OMO.#: OMO-VNI4140KTR

 Solid State Relays - PCB Mount Quad Hi side smart Power SS Relay
110-44-628-41-001000

Mfr.#: 110-44-628-41-001000

OMO.#: OMO-110-44-628-41-001000

 IC & Component Sockets 28P TIN PIN TIN CONT
PE2512FKE070R033L

Mfr.#: PE2512FKE070R033L

OMO.#: OMO-PE2512FKE070R033L-YAGEO

 Current Sense Resistors - SMD 1W 0.033 Ohms 1%
HCPL-316J-000E

Mfr.#: HCPL-316J-000E

OMO.#: OMO-HCPL-316J-000E-BROADCOM

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BPW17N

Mfr.#: BPW17N

OMO.#: OMO-BPW17N-VISHAY-SEMI-OPTO

 Optical Sensors Phototransistors NPN Phototransistor 32V 100mW 825nm
ALQ324

Mfr.#: ALQ324

OMO.#: OMO-ALQ324-PANASONIC

 Power Relay 24VDC 10(NO)/3(NC)A SPST-NO (20mm 10mm 16mm) THT
CRCW2512220KFKEG

Mfr.#: CRCW2512220KFKEG

OMO.#: OMO-CRCW2512220KFKEG-VISHAY-DALE

 Thick Film Resistors - SMD 1watt 220Kohms 1%
Disponibilidad
Valores:
62
En orden:
2045
Ingrese la cantidad:
El precio actual de APT43GA90BD30 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
9,40 US$
9,40 US$
10
8,46 US$
84,60 US$
25
7,70 US$
192,50 US$
50
7,18 US$
359,00 US$
100
6,95 US$
695,00 US$
250
6,34 US$
1 585,00 US$
500
5,79 US$
2 895,00 US$
1000
4,90 US$
4 900,00 US$
2500
4,64 US$
11 600,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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