ALD212908

ALD212908PAL vs ALD212908ASAL vs ALD212908APAL

 
PartNumberALD212908PALALD212908ASALALD212908APAL
DescriptionMOSFET Dual N-Ch Matched Pr VGS=0.0VMOSFET Dual N-Ch Matched Pr VGS=0.0VMOSFET Dual N-Ch Matched Pr VGS=0.0V
ManufacturerAdvanced Linear DevicesAdvanced Linear DevicesAdvanced Linear Devices
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleSMD/SMTThrough Hole
Package / CasePDIP-8SOIC-8PDIP-8
Number of Channels2 Channel2 Channel2 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage10 V10 V10 V
Id Continuous Drain Current79 mA79 mA79 mA
Rds On Drain Source Resistance14 Ohms14 Ohms14 Ohms
Vgs th Gate Source Threshold Voltage780 mV800 mV800 mV
Vgs Gate Source Voltage10.6 V10.6 V10.6 V
Minimum Operating Temperature0 C0 C0 C
Maximum Operating Temperature+ 70 C+ 70 C+ 70 C
Pd Power Dissipation500 mW500 mW (1/2 W)500 mW (1/2 W)
ConfigurationDualDualDual
Channel ModeEnhancementEnhancementEnhancement
TradenameEPADEPADEPAD
PackagingTubeTubeTube
SeriesALD212908PALD212908AALD212908A
Transistor Type2 N-Channel2 N-Channel2 N-Channel
BrandAdvanced Linear DevicesAdvanced Linear DevicesAdvanced Linear Devices
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity505050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time10 ns10 ns10 ns
Typical Turn On Delay Time10 ns10 ns10 ns
Unit Weight0.032805 oz0.002998 oz0.032805 oz
Fabricante Parte # Descripción RFQ
Advanced Linear Devices
Advanced Linear Devices
ALD212908SAL MOSFET Dual N-Ch Matched Pr VGS=0.0V
ALD212908PAL MOSFET Dual N-Ch Matched Pr VGS=0.0V
ALD212908ASAL MOSFET Dual N-Ch Matched Pr VGS=0.0V
ALD212908APAL MOSFET Dual N-Ch Matched Pr VGS=0.0V
ALD212908APAL MOSFET Dual N-Ch Matched Pr VGS=0.0V
ALD212908ASAL MOSFET Dual N-Ch Matched Pr VGS=0.0V
ALD212908SAL MOSFET Dual N-Ch Matched Pr VGS=0.0V
ALD212908PAL MOSFET Dual N-Ch Matched Pr VGS=0.0V
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