2SK31

2SK3176(F) vs 2SK315F-SPA-AC vs 2SK3162-91-E

 
PartNumber2SK3176(F)2SK315F-SPA-AC2SK3162-91-E
DescriptionMOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm- Bulk (Alt: 2SK315F-SPA-AC)- Bulk (Alt: 2SK3162-91-E)
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance52 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation150 W--
ConfigurationSingle--
Channel ModeEnhancement--
Height20 mm--
Length15.5 mm--
Series2SK3176--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.245577 oz--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
2SK3176(F) MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm
2SK3176(F) MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm
2SK315F-SPA-AC - Bulk (Alt: 2SK315F-SPA-AC)
2SK3162-91-E - Bulk (Alt: 2SK3162-91-E)
2SK316 Nuevo y original
2SK3161STR-E Trans MOSFET N-CH Si 200V 15A 3-Pin(2+Tab) LDPAK(S)-1 T/R
2SK317 Nuevo y original
2SK3174 Nuevo y original
2SK3175 Nuevo y original
2SK3176 Nuevo y original
2SK3179(TE85L) Nuevo y original
2SK318 Nuevo y original
2SK3183 Nuevo y original
2SK3199,K3199 Nuevo y original
2SK3160 Nuevo y original
2SK319 Nuevo y original
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