PartNumber | 2SC5865TLQ |
Description | Bipolar Transistors - BJT NPN 60V 1A |
Manufacturer | ROHM Semiconductor |
Product Category | Bipolar Transistors - BJT |
RoHS | Y |
Mounting Style | SMD/SMT |
Transistor Polarity | NPN |
Configuration | Single |
Collector Emitter Voltage VCEO Max | 60 V |
Collector Base Voltage VCBO | 60 V |
Emitter Base Voltage VEBO | 6 V |
Maximum DC Collector Current | 1 A |
Gain Bandwidth Product fT | 250 MHz |
Maximum Operating Temperature | + 150 C |
Series | 2SC5865 |
DC Current Gain hFE Max | 120 at 100 mA, 2 V |
Height | 0.85 mm |
Length | 2.9 mm |
Packaging | Reel |
Width | 1.6 mm |
Brand | ROHM Semiconductor |
DC Collector/Base Gain hfe Min | 120 |
Pd Power Dissipation | 500 mW |
Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 |
Subcategory | Transistors |