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| PartNumber | 2SC5065-O(TE85L,F) | 2SC5065-O(TE85LF)CT-ND | 2SC5065-O(TE85LF)DKR-ND |
| Description | Bipolar Transistors - BJT USM MM (HF) TRANSISTOR Pd=100mW F=1GHz | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-70-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 12 V | - | - |
| Collector Base Voltage VCBO | 20 V | - | - |
| Emitter Base Voltage VEBO | 3 V | - | - |
| Collector Emitter Saturation Voltage | - | - | - |
| Maximum DC Collector Current | 30 mA | - | - |
| Gain Bandwidth Product fT | 7 GHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| DC Current Gain hFE Max | 240 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | 30 mA | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba |
2SC5065-O(TE85L,F) | Bipolar Transistors - BJT USM MM (HF) TRANSISTOR Pd=100mW F=1GHz | |
| 2SC5065-O(TE85LF)CT-ND | Nuevo y original | ||
| 2SC5065-O(TE85LF)DKR-ND | Nuevo y original | ||
| 2SC5065-O(TE85LF)TR-ND | Nuevo y original |