2SC5065

2SC5065-O(TE85L,F) vs 2SC5065-O vs 2SC5065-O(TE85LF)CT-ND

 
PartNumber2SC5065-O(TE85L,F)2SC5065-O2SC5065-O(TE85LF)CT-ND
DescriptionBipolar Transistors - BJT USM MM (HF) TRANSISTOR Pd=100mW F=1GHz
ManufacturerToshibaTOSHIBA-
Product CategoryBipolar Transistors - BJTRF Transistors (BJT)-
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSC-70-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max12 V--
Collector Base Voltage VCBO20 V--
Emitter Base Voltage VEBO3 V--
Collector Emitter Saturation Voltage---
Maximum DC Collector Current30 mA--
Gain Bandwidth Product fT7 GHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 125 C--
DC Current Gain hFE Max240--
PackagingReel--
BrandToshiba--
Continuous Collector Current30 mA--
DC Collector/Base Gain hfe Min80--
Pd Power Dissipation100 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
2SC5065-Y(TE85L,F) Bipolar Transistors - BJT Radio-Freq Bipolar 30mA 100mW 12V
2SC5065-O(TE85L,F) Bipolar Transistors - BJT USM MM (HF) TRANSISTOR Pd=100mW F=1GHz
2SC5065-Y(TE85L,F) Bipolar Transistors - BJT Radio-Freq Bipolar 30mA 100mW 12V
2SC5065-O Nuevo y original
2SC5065-Y Nuevo y original
2SC5065-O(TE85LF)CT-ND Nuevo y original
2SC5065-O(TE85LF)DKR-ND Nuevo y original
2SC5065-O(TE85LF)TR-ND Nuevo y original
2SC5065-Y(TE85LF)CT-ND Nuevo y original
2SC5065-Y(TE85LF)DKR-ND Nuevo y original
2SC5065-Y(TE85LF)TR-ND Nuevo y original
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