2SB1201

2SB1201S-TL-E vs 2SB1201S-E vs 2SB1201S

 
PartNumber2SB1201S-TL-E2SB1201S-E2SB1201S
DescriptionBipolar Transistors - BJT BIP PNP 2A 50VBipolar Transistors - BJT BIP PNP 2A 50V
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTThrough Hole-
Package / CaseTO-252-3TO-251-3-
Transistor PolarityPNPNPN, PNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 50 V50 V-
Collector Base Voltage VCBO- 60 V60 V-
Emitter Base Voltage VEBO- 6 V6 V-
Collector Emitter Saturation Voltage- 0.3 V150 mV, - 300 mV-
Maximum DC Collector Current- 4 A4 A, - 4 A-
Gain Bandwidth Product fT150 MHz150 MHz-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C+ 150 C-
Series2SB12012SB1201-
DC Current Gain hFE Max560--
PackagingReelBulk-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current- 2 A2 A-
Pd Power Dissipation15 W800 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity700500-
SubcategoryTransistorsTransistors-
Unit Weight0.009906 oz0.139332 oz-
Fabricante Parte # Descripción RFQ
2SB1201S-TL-E Bipolar Transistors - BJT BIP PNP 2A 50V
2SB1201S-E Bipolar Transistors - BJT BIP PNP 2A 50V
2SB1201T-TL-E Bipolar Transistors - BJT BIP PNP 2A 50V
2SB1201S Nuevo y original
2SB1201T Nuevo y original
ON Semiconductor
ON Semiconductor
2SB1201T-E Bipolar Transistors - BJT BIP PNP 2A 50V
2SB1201T-TL-E Bipolar Transistors - BJT BIP PNP 2A 50V
2SB1201T-E Bipolar Transistors - BJT BIP PNP 2A 50V
2SB1201S-TL-E Bipolar Transistors - BJT BIP PNP 2A 50V
2SB1201S-E Bipolar Transistors - BJT BIP PNP 2A 50V
Top