 |  | |
| PartNumber | 2N7002H6327XT | 2N7002H6327XTSA2 |
| Description | MOSFET N-Ch 60V 300mA SOT-23-3 | MOSFET N-CH 60V 0.3A SOT23 |
| Manufacturer | Infineon | Infineon Technologies |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | - |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - |
| Id Continuous Drain Current | 300 mA | - |
| Rds On Drain Source Resistance | 1.6 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 600 pC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | Reel |
| Height | 1.1 mm | - |
| Length | 2.9 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 1.3 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 200 mS | - |
| Fall Time | 3.1 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 3.3 ns | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 5.5 ns | - |
| Typical Turn On Delay Time | 3 ns | - |
| Part # Aliases | 2N7002 2N7002H6327XTSA2 H6327 SP000929182 | - |
| Unit Weight | 0.000282 oz | 0.050717 oz |
| Series | - | 2N7002 |
| Part Aliases | - | 2N7002 2N7002H6327XT H6327 SP000929182 |
| Package Case | - | SOT-23-3 |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
2N7002H6327XT | MOSFET N-Ch 60V 300mA SOT-23-3 | |
| 2N7002H6327XTSA2 | MOSFET N-CH 60V 0.3A SOT23 |