PartNumber | 2N6768T1 | 2N6768 |
Description | MOSFET N Channel MOSFET | MOSFET N Channel MOSFET |
Manufacturer | Microchip | Microchip |
Product Category | MOSFET | MOSFET |
RoHS | N | N |
Technology | Si | Si |
Brand | Microchip / Microsemi | Microchip / Microsemi |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 100 | 22 |
Subcategory | MOSFETs | MOSFETs |
Mounting Style | - | Through Hole |
Package / Case | - | TO-204AE-2 |
Number of Channels | - | 1 Channel |
Transistor Polarity | - | N-Channel |
Vds Drain Source Breakdown Voltage | - | 400 V |
Id Continuous Drain Current | - | 14 A |
Rds On Drain Source Resistance | - | 400 mOhms |
Vgs th Gate Source Threshold Voltage | - | 2 V |
Vgs Gate Source Voltage | - | 20 V |
Qg Gate Charge | - | 110 nC |
Minimum Operating Temperature | - | - 55 C |
Maximum Operating Temperature | - | + 150 C |
Pd Power Dissipation | - | 150 W |
Configuration | - | Single |
Channel Mode | - | Enhancement |
Transistor Type | - | 1 N-Channel |
Fall Time | - | 130 ns |
Rise Time | - | 190 ns |
Typical Turn Off Delay Time | - | 170 ns |
Typical Turn On Delay Time | - | 35 ns |
Unit Weight | - | 0.014110 oz |