PartNumber | 2N5880 | 2N5880G | 2N5880G. |
Description | Bipolar Transistors - BJT 80V 15A PNP | ||
Manufacturer | Central Semiconductor | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-3-2 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 80 V | - | - |
Collector Base Voltage VCBO | 80 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 4 V | - | - |
Maximum DC Collector Current | 15 A | - | - |
Gain Bandwidth Product fT | 4 MHz | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 200 C | - | - |
Series | 2N5880 | - | - |
Packaging | Tube | - | - |
Brand | Central Semiconductor | - | - |
DC Collector/Base Gain hfe Min | 20 | - | - |
Pd Power Dissipation | 160 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 20 | - | - |
Subcategory | Transistors | - | - |
Part # Aliases | 2N5880 PBFREE | - | - |
Unit Weight | 0.225789 oz | - | - |