2N5880

2N5880 vs 2N5880G vs 2N5880G.

 
PartNumber2N58802N5880G2N5880G.
DescriptionBipolar Transistors - BJT 80V 15A PNP
ManufacturerCentral Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-3-2--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage4 V--
Maximum DC Collector Current15 A--
Gain Bandwidth Product fT4 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 200 C--
Series2N5880--
PackagingTube--
BrandCentral Semiconductor--
DC Collector/Base Gain hfe Min20--
Pd Power Dissipation160 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity20--
SubcategoryTransistors--
Part # Aliases2N5880 PBFREE--
Unit Weight0.225789 oz--
Fabricante Parte # Descripción RFQ
Central Semiconductor
Central Semiconductor
2N5880 Bipolar Transistors - BJT 80V 15A PNP
2N5880G Nuevo y original
2N5880G. Nuevo y original
2N5880ROHS Nuevo y original
Microchip / Microsemi
Microchip / Microsemi
2N5880 Bipolar Transistors - BJT 80V 15A PNP
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