STP13N60M2 vs STP13N60DM2 vs STP13N60M2 13N60M2

 
PartNumberSTP13N60M2STP13N60DM2STP13N60M2 13N60M2
DescriptionMOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2MOSFET
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V600 V-
Id Continuous Drain Current11 A11 A-
Rds On Drain Source Resistance380 mOhms365 mOhms-
Vgs th Gate Source Threshold Voltage3 V3 V-
Vgs Gate Source Voltage25 V10 V-
Qg Gate Charge17 nC19 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation110 W110 W-
ConfigurationSingleSingle-
TradenameMDmesh--
PackagingTube--
SeriesSTP13N60M2--
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time9.5 ns10.6 ns-
Product TypeMOSFETMOSFET-
Rise Time10 ns4.8 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time41 ns42.5 ns-
Typical Turn On Delay Time11 ns12.3 ns-
Unit Weight0.011640 oz--
Channel Mode-Enhancement-
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