STL12N60M2 vs STL12N10F7 vs STL12N3LLH5

 
PartNumberSTL12N60M2STL12N10F7STL12N3LLH5
DescriptionMOSFET N-channel 600 V, 0.400 Ohm typ., 6.5 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 HV packageMOSFET N-channel 100 V, 11.3 mOhm typ., 12 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 packageMOSFET N-CH 30V 12A POWERFLAT
ManufacturerSTMicroelectronicsSTMicroelectronicsST
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerFLAT-5x6-HV-8PowerFLAT-8-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V100 V-
Id Continuous Drain Current6.5 A44 A-
Rds On Drain Source Resistance495 mOhms13.3 mOhms-
Vgs th Gate Source Threshold Voltage4 V2.5 V-
Vgs Gate Source Voltage25 V20 V-
Qg Gate Charge16 nC30 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation52 W52 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenameMDmeshSTripFET-
PackagingReel-Reel
Height1 mm--
Length6.35 mm--
ProductPower MOSFET--
SeriesSTL12N60M2STL12N10F7STL12N3LLH5
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeMDmesh M2--
Width5.4 mm--
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time18 ns8.9 ns-
Product TypeMOSFETMOSFET-
Rise Time9.2 ns8.7 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time56 ns28.6 ns-
Typical Turn On Delay Time9.2 ns22.4 ns-
Package Case--PowerFlat-8
Pd Power Dissipation--50 W
Vgs Gate Source Voltage--22 V
Id Continuous Drain Current--12 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--9 mOhms
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