STB150NF55T4 vs STB150NF04 vs STB150N3LH6

 
PartNumberSTB150NF55T4STB150NF04STB150N3LH6
DescriptionMOSFET N-Ch 55 Volt 120 AmpMOSFET N-Ch, 40V-0.005ohms 80AMOSFET N-Ch 30V 2.4mOhm 80A STripFET VI DeepGATE
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage55 V40 V30 V
Id Continuous Drain Current120 A80 A80 A
Rds On Drain Source Resistance6 mOhms7 mOhms3 mOhms
Vgs Gate Source Voltage20 V20 V20 V
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation300 W300 W110 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
TradenameSTripFET--
PackagingReelReelReel
Height4.6 mm4.6 mm-
Length10.4 mm10.4 mm-
SeriesSTB150NF55STB150NSTB150N3LH6
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeMOSFET--
Width9.35 mm9.35 mm-
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Forward Transconductance Min160 S--
Fall Time80 ns45 ns40 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time180 ns150 ns85 ns
Factory Pack Quantity100010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time140 ns70 ns100 ns
Typical Turn On Delay Time35 ns15 ns15 ns
Unit Weight0.139332 oz0.079014 oz0.139332 oz
Vgs th Gate Source Threshold Voltage--2.5 V
Qg Gate Charge--80 nC
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