STB10N60M2 vs STB10N65K3 vs STB10N60M2 10N60M2

 
PartNumberSTB10N60M2STB10N65K3STB10N60M2 10N60M2
DescriptionMOSFET N-Ch 600V 0.55 Ohm typ. 7.5AMOSFET N-CH 650V 0.75Ohm 10A Zener-protected
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V650 V-
Id Continuous Drain Current7.5 A10 A-
Rds On Drain Source Resistance600 mOhms750 mOhms-
Vgs th Gate Source Threshold Voltage4 V4.5 V-
Vgs Gate Source Voltage25 V30 V-
Qg Gate Charge13.5 nC42 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation85 W150 W-
ConfigurationSingleSingle-
TradenameMDmeshSuperMesh-
PackagingReelReel-
SeriesSTB10N60M2STB10N65K3-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time13.2 ns35 ns-
Product TypeMOSFETMOSFET-
Rise Time8 ns14 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time32.5 ns44 ns-
Typical Turn On Delay Time8.8 ns14.5 ns-
Unit Weight0.139332 oz0.139332 oz-
Channel Mode-Enhancement-
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