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| PartNumber | SSR1N60BTM | SSR1N60BTM_WS | SSR1N60BTM_F080 |
| Description | MOSFET N-Ch/600V/0.9a/12Ohm | IGBT Transistors MOSFET 600V 0.9A 12Ohm N-Channel | MOSFET N-CH 600V 0.9A DPAK |
| Manufacturer | ON Semiconductor | Fairchild Semiconductor | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 900 mA | - | - |
| Rds On Drain Source Resistance | 12 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 0.92 S | - | - |
| Fall Time | 35 ns | 27 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 45 ns | 21 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | 13 ns | - |
| Typical Turn On Delay Time | 14 ns | 7 ns | - |
| Part # Aliases | SSR1N60BTM_NL | - | - |
| Unit Weight | 0.139332 oz | 0.000557 oz | - |
| Package Case | - | TO-252-3 | - |
| Pd Power Dissipation | - | 2.5 W | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 900 mA | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V to 4 V | - |
| Rds On Drain Source Resistance | - | 11.5 Ohms | - |
| Qg Gate Charge | - | 4.8 nC | - |