SSM6J511NU,LF vs SSM6J511NU vs SSM6J512NU

 
PartNumberSSM6J511NU,LFSSM6J511NUSSM6J512NU
DescriptionMOSFET Small-signal MOSFET Power MGMT switch
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseUDFN6B-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current14 A--
Rds On Drain Source Resistance6.5 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge47 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.75 mm--
Length2 mm--
SeriesSSM6J511--
Transistor Type1 P-Channel--
Width2 mm--
BrandToshiba--
Forward Transconductance Min27 S--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Unit Weight0.000300 oz--
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