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| PartNumber | SQ1539EH-T1_GE3 | SQ1563AEH-T1_GE3 | SQ154 MSOP-10 SQ POWER M |
| Description | MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified | MOSFET N Ch 20Vds 8Vgs AEC-Q101 Qualified | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 20 V | - |
| Id Continuous Drain Current | 850 mA | 850 mA | - |
| Rds On Drain Source Resistance | 210 mOhms, 788 mOhms | 150 mOhms, 500 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V, 2.6 V | 450 mV, 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 8 V | - |
| Qg Gate Charge | 1.4 nC, 1.6 nC | 930 pC, 1 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 1.5 W | 1.5 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 1 mm | - | - |
| Length | 2.1 mm | - | - |
| Series | SQ | SQ | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel | - |
| Width | 1.25 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 1.2 S, 0.6 S | 2.6 S, 1.5 S | - |
| Fall Time | 32 ns, 17 ns | 17 ns, 20 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 18 ns, 39 ns | 21 ns, 22 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 8 ns, 10 ns | 20 ns, 28 ns | - |
| Typical Turn On Delay Time | 3 ns, 4 ns | 3 ns, 2 ns | - |
| Unit Weight | 0.000265 oz | 0.000265 oz | - |