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| PartNumber | SIZF906DT-T1-GE3 | SIZF906ADT-T1-GE3 | SIZF906DT |
| Description | MOSFET 30V Vds 20V Vgs PowerPAIR F 6 x 5 | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAIR-6x5-8 | PowerPAIR-6x5F-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 60 A | 60 A | - |
| Rds On Drain Source Resistance | 3 mOhms, 900 uOhms | 3.8 mOhms, 1.17 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | 1.1 V | - |
| Vgs Gate Source Voltage | - 16 V, 20 V | 10 V | - |
| Qg Gate Charge | 49 nC, 200 nC | 24.5 nC, 100 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 38 W, 83 W | 38 W, 83 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | TrenchFET, SkyFET, PowerPAIR | - |
| Packaging | Reel | Reel | - |
| Series | SIZ | SIZ | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay Semiconductors | - |
| Forward Transconductance Min | 130 S, 130 S | 130 S, 130 S | - |
| Fall Time | 40 ns, 30 ns | 40 ns, 30 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 80 ns, 60 ns | 80 ns, 60 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns, 65 ns | 20 ns, 65 ns | - |
| Typical Turn On Delay Time | 20 ns, 45 ns | 20 ns, 45 ns | - |