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| PartNumber | SIHA11N80E-GE3 | SIHA100N60E-GE3 | SIHA11N80E |
| Description | MOSFET 800V Vds 30V Vgs TO-220 FULLPAK | MOSFET 600V Vds; +/-30V Vgs Thin-Lead TO-220 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220FP-3 | Thin-Lead TO-220-3 FULLPAK | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 800 V | 600 V | - |
| Id Continuous Drain Current | 12 A | 30 A | - |
| Rds On Drain Source Resistance | 380 mOhms | 100 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 3 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 88 nC | 50 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 34 W | 35 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Series | E | E | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 4.5 S | 11 S | - |
| Fall Time | 18 ns | 20 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 15 ns | 34 ns | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 55 ns | 33 ns | - |
| Typical Turn On Delay Time | 18 ns | 21 ns | - |
| Packaging | - | Tube | - |
| Transistor Type | - | 1 N-Channel | - |
| Factory Pack Quantity | - | 50 | - |