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SIHA100N60E-GE3

SIHA100N60E-GE3
Mfr. #:
SIHA100N60E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds; +/-30V Vgs Thin-Lead TO-220
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHA100N60E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHA100N60E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
Thin-Lead TO-220-3 FULLPAK
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
30 A
Rds On - Resistencia de la fuente de drenaje:
100 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
50 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
35 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
E
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
11 S
Otoño:
20 ns
Tipo de producto:
MOSFET
Hora de levantarse:
34 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
33 ns
Tiempo típico de retardo de encendido:
21 ns
Tags
SIHA1, SIHA, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHA100N60E-GE3
DISTI # V99:2348_22989551		Vishay IntertechnologiesSIHA100N60E-GE30
  • 1000000:$2.6520
  • 500000:$2.6560
  • 100000:$3.3490
  • 10000:$4.7790
  • 1000:$5.0300
SIHA100N60E-GE3
DISTI # SIHA100N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V TO-220 FULLPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 3000:$2.5263
  • 1000:$2.6592
  • 100:$3.7039
  • 25:$4.2736
  • 10:$4.5210
  • 1:$5.0300
SIHA100N60E-GE3
DISTI # SIHA100N60E-GE3		Vishay IntertechnologiesTransistor MOSFET N-CH 600V 30A 3-Pin TO-220 FP (Alt: SIHA100N60E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€2.0900
  • 100:€2.1900
  • 500:€2.1900
  • 50:€2.2900
  • 25:€2.4900
  • 10:€3.0900
  • 1:€3.9900
SIHA100N60E-GE3
DISTI # 78-SIHA100N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds,+/-30V Vgs Thin-Lead TO-220
RoHS: Compliant		0
  • 1:$5.0600
  • 10:$4.1900
  • 100:$3.4500
  • 250:$3.3400
  • 500:$3.0000
  • 1000:$2.5300
  • 2500:$2.4000
Imagen Parte # Descripción
SIHA100N60E-GE3

Mfr.#: SIHA100N60E-GE3

OMO.#: OMO-SIHA100N60E-GE3

 MOSFET 600V Vds; +/-30V Vgs Thin-Lead TO-220
SIHA100N60E-GE3

Mfr.#: SIHA100N60E-GE3

OMO.#: OMO-SIHA100N60E-GE3-VISHAY

 MOSFET N-CH 600V TO-220 FULLPAK
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de SIHA100N60E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,06 US$
5,06 US$
10
4,19 US$
41,90 US$
100
3,45 US$
345,00 US$
250
3,34 US$
835,00 US$
500
3,00 US$
1 500,00 US$
1000
2,53 US$
2 530,00 US$
2500
2,40 US$
6 000,00 US$
5000
2,31 US$
11 550,00 US$
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