PartNumber | SI4943CDY-T1-E3 | SI4943CDY-T1-GE3 | SI4943CDY-T1-E3-S |
Description | MOSFET -20V Vds 20V Vgs SO-8 | MOSFET -20V Vds 20V Vgs SO-8 | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | E | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 8 A | - | - |
Rds On Drain Source Resistance | 19.2 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 62 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 3.1 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | TrenchFET | - |
Packaging | Reel | Reel | - |
Series | SI4 | SI4 | - |
Transistor Type | 2 P-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 19 S | - | - |
Fall Time | 15 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 71 ns | - | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 29 ns | - | - |
Typical Turn On Delay Time | 50 ns | - | - |
Part # Aliases | SI4943CDY-E3 | SI4943CDY-GE3 | - |
Unit Weight | 0.006596 oz | 0.006596 oz | - |
Height | - | 1.75 mm | - |
Length | - | 4.9 mm | - |
Width | - | 3.9 mm | - |