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| PartNumber | SI4931DY-T1-E3 | SI4931DY-T1-GE3 | SI4931DY-T1-E3-CUT TAPE |
| Description | MOSFET -12V Vds 8V Vgs SO-8 | MOSFET -12V Vds 8V Vgs SO-8 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | E | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Series | SI4 | SI4 | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SI4931DY-E3 | SI4931DY-GE3 | - |
| Unit Weight | 0.006596 oz | 0.006596 oz | - |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 12 V | - |
| Id Continuous Drain Current | - | 8.9 A | - |
| Rds On Drain Source Resistance | - | 18 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 400 mV | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Qg Gate Charge | - | 52 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 2 W | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 1.75 mm | - |
| Length | - | 4.9 mm | - |
| Transistor Type | - | 2 P-Channel | - |
| Width | - | 3.9 mm | - |
| Forward Transconductance Min | - | 26 S | - |
| Fall Time | - | 155 ns | - |
| Rise Time | - | 46 ns | - |
| Typical Turn Off Delay Time | - | 230 ns | - |
| Typical Turn On Delay Time | - | 25 ns | - |